نتایج جستجو برای: silicon substitution
تعداد نتایج: 137468 فیلتر نتایج به سال:
The electrical-substitution cryogenic detector BOLometer for Use in the range of X-rays (BOLUX), which was developed some years ago at CEA/DAM, has been set up and restarted now LNHB. It used primary measurement intensity (total energy per unit time) monochromatic synchrotron beams from 3 to 30 keV. These well-determined photon have employed efficiency calibration two photodiodes terms current ...
High-quality β-Ga2O3 films were epitaxially grown by using metalorganic chemical vapor deposition (MOCVD) with different donor concentrations, and their shallow states investigated the temperature-dependent Hall measurement secondary ion mass spectroscopy (SIMS) analysis. Two levels ionization energies of ∼36 ∼140 meV extracted. It is found that unintentional doping (UID) effects in MOCVD contr...
abstract: introduction & objective: teaching human anatomy, at any level, relies not only on the expertise of a tutor but also on the availability and use of good teaching aids. plastination specimens have a unique position as a teaching aid to exhibit accurate anatomical structures and are easy to be stored and handled by students. the aim of this study was to assess the comparative use of pol...
In the present study phase transformation of silicon and silica during milling in different atmospheres was investigated. The silicon powder was subjected to high energy ball milling in ammonia (25%) atmosphere. The milled powder was subsequently annealed at 1200 ◦C for 1 hour. In another test a mixture of AlN and amorphous silica (micro silica) was subjected to high energy ball milling. The m...
The rapid melting of silicon film due to the absorption of a CW laser beam radiation is studied. The silicon film melting and recrystallization is mainly controlled by the temperature distribution in the semiconductor. The enthalpy technique for the solution of phase change problems is used in an explicit finite difference form to calculate the transient temperature distribution in the silicon ...
The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...
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