This Paper proposes the implementation of multiplier using ancient Indian vedic mathematics (Urdhvatiryagbhyam) that has been modified to improve performance of high speed mathematics, it shows the modified architecture for a 16*16 Vedic multiplier module using Urdhvatiryagbhyam technique. The design implementation is described in both at gate level and high level RTL code using Verilog Hardwar...

Passive signal regeneration based on the Membrane InP Switch (MIPS) is demonstrated. Because of the high confinement of light in the active region of the MIPS, the device acts as a saturable absorber with a highly non-linear response. Using this effect, the extinction ratio (ER) of low-ER signals can be tripled and a receiver sensitivity enhancement of 4.5dB is demonstrated using an input signa...

Gate-leakage reduction is the key motivation for the replacement of SiO2 with alternative gate dielectrics. 45nm gate length scaled grooved and bulk nMOSFETs are evaluated to bring out the most compatible and power saving dielectric option using Si3N4 and SiO2 using Silvaco ATLAS device simulator. At the scaled thickness, SiO2 controls the leakage better than Si3N4, whereas at increased thickne...

In order to perform the assembly of a haptic device in the set of a simulator, we have to check that it operates in its optimal workspace. In general it will depend on the required functionality. One of the characteristics that define the performance of a haptic device is the manipulability. In this paper we are going to accomplish a kinematics study of the device PHANToM OMNi. This study will ...

Heterojunction Bipolar Transistors (HBTs) attract much industrial interest nowadays because of their capability to operate at high current densities [l]. AlGaAs/GaAs or InGaP/GaAs based devices are used for power applications in modern mobile telecommunication systems. Accurate simulations save expensive technological efforts to obtain significant improvements of the device performance. The two...

Due to their specific structures the power devices need special models different from those developed for low power electronics. The development of such special models is far from being simple as distributed nature of phenomena often determinates the dynamic response of the device. In this paper several modeling techniques will be discussed. These include the usage of the hardware description l...

Recent advances in development of semiconductor devices lead to more and more complex device structures. This concerns device geometry as well as tne combination of different materials. Due to the rapid reduction of device geometries, the models describing the device physics increase in complexity. 10 gain additional insight into the performance of devices under realistic dynamic boundary condi...

The Wigner function formulation of quantum mechanics has shown much promise as a basis for accurately modeling quantum electronic devices, especially under transient conditions. In this work, we demonstrate the importance of using a finite applied bias slew rate (as opposed to instantaneous switching) to better approximate experimental device conditions, and thus to produce more accurate transi...

Simulation results of InAlAs/InGaAs High Electron Mobility Transistors based on both GaAs and InP substrates are presented using the two-dimensional device simulator MINIMOS-NT. Three different HEMT technologies are evaluated by simulation and a single set of physical parameters is verified. The critical interaction of selfheating, impact ionization, SiN surface effects, and material compositio...

The implementation of generation±recombination (g±r) noise in a partial di€erential equation based device simulator is presented. Derived from the Shockley±Read±Hall model, the strength of each local g±r noise source is calculated based on the carrier transition rates between the conduction band, valence band, and trap states. The perturbations of these local g±r noise sources are then transmit...