نتایج جستجو برای: single walled carbon nanotub

تعداد نتایج: 1135733  

Saeid Abedini Khoramie Samira Eftekharjoo Shahram Moradi Somayeh Miryousefi

The reaction mechanism between (H2C) and (7, 0), zigzag single-walled carbon nanotubes(ZSWCNTs) on two different orientation of C-C have been studied by semi empirical AM!method. The activation barriers of (H2C) adding to (7, 0) ZSWCNT are computed and compared.The effects of diameters of zigzag SWCNT on their binding energies were studied

Journal: :Science 2015
Qing Cao Shu-Jen Han Jerry Tersoff Aaron D Franklin Yu Zhu Zhen Zhang George S Tulevski Jianshi Tang Wilfried Haensch

Moving beyond the limits of silicon transistors requires both a high-performance channel and high-quality electrical contacts. Carbon nanotubes provide high-performance channels below 10 nanometers, but as with silicon, the increase in contact resistance with decreasing size becomes a major performance roadblock. We report a single-walled carbon nanotube (SWNT) transistor technology with an end...

Journal: :Physical review letters 2000
Rols Benes Anglaret Sauvajol Papanek Fischer Coddens Schober Dianoux

The vibrational density of states of single-wall carbon nanotubes (SWNT) was obtained from inelastic neutron scattering data from 0 to 225 meV. The spectrum is similar to that of graphite above 40 meV, while intratube features are clearly observed at 22 and 36 meV. An unusual energy dependence below 10 meV is assigned to contributions from intertube modes in the 2D triangular lattice of SWNT bu...

Journal: :Nanotechnology 2012
Osman Balci Coskun Kocabas

We have studied the high frequency performance limits of single-walled carbon nanotube (SWNT) transistors in the diffusive transport regime limited by the acoustic phonon scattering. The relativistic band structure of single-walled carbon nanotubes combined with the acoustic phonon scattering provides an analytical model for the charge transport of the radio frequency transistors. We were able...

Journal: :Nanotechnology 2007
Prashanth Makaram Selvapraba Selvarasah Xugang Xiong Chia-Ling Chen Ahmed Busnaina Nishant Khanduja Mehmet R Dokmeci

We present a hybrid approach that combines top-down fabrication with bottom-up directed assembly for making single-walled carbon nanotube (SWNT) based three-dimensional interconnects. The SWNTs are assembled using dielectrophoresis at room temperature on a microfabricated 3D platform. The two-terminal resistance of the assembled SWNTs at 10 Vpp assembly voltage is approximately 545 Ω. Simulatio...

Journal: :Japanese Journal of Applied Physics 2008

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