The Target Group has recently begun to apply ion beam sputter deposition for target pusher layer fabrication. Metal deposition on both levitated and stalk-mounted fusion targets has been demonstrated. We believe this is the first application of this versatile deposition technique to IF target pusher layerfabrication. Our initial results indicate that ion beam sputtering is far more controllable...

Measurements of the sputtering yield of solid O2 by 25–240-keV H + show that it is double valued in its dependence on electronic stopping power. We propose that this is because the electronic sputtering yield is dominated by repulsion of ions in the ionization track of the projectile which, at low velocities, is augmented near the surface due to the additional ionization resulting from electron...

The homoepitaxial growth of initially flat surfaces has so far always led to surfaces which become rougher and rougher as the number of layers increases: even in systems exhibiting ‘‘layer-by-layer’’ growth the registry of the layers is gradually lost. We propose that pulsed glancing-angle sputtering, once per monolayer, can in principle lead to layer-by-layer growth that continues indefinitely...

In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference betwe...

Previous studies have shown that the size distributions of small clusters ( n < or = 40; n = number of atoms/cluster) generated by sputtering obey an inverse power law with an exponent between -8 and -4. Here we report electron microscopy studies of the size distributions of larger clusters ( n > or = 500) sputtered by high-energy ion impacts. These new measurements also yield an inverse power ...

Abstrad: Recent developments in the techniques used to produce surface layers of oxides and nitrides by reactive sputtering are considered. These techniques have to give films which can be produced onto large-area, low-temperature substrate materials, such as glass and polymer. It is shown that this has led to the adoption of ion-assisted processes. In particular the use of plasmas leaked from ...

Resonance Ionization Spectroscopy (RIS) technique is an ultrasensitive method of detection of atoms and molecules. Application of RIS to material analysis requires an atomization step which is based in our set-up on ion beam sputtering. We present a review of the analytical studies we have performed demonstrating the very attractive potentialities of this method. RIS can be also used to study t...

The morphological evolution of a GaAs surface induced by a focused ion beam (FIB) has been investigated by in situ electron microscopy. Under off-normal bombardment without sample rotation, Ga droplets with sizes from 70 to 25 nm in diameter on the GaAs surface can self-assemble into a highly ordered hexagonal pattern instead of Ostwald ripening or coalescence. The mechanism relies on a balance...

The ZnO:Al thin films were prepared by RF magnetron sputtering on Si substrate using Pt as interdigitated electrodes. The structure was characterized by XRD and SEM analyses, and the ethanol vapor gas sensing as well as electrical properties have been investigated and discussed. The gas sensing results show that the sensitivity for detecting 400 ppm ethanol vapor was ~20 at an operating tempera...

Sputtering and decomposition of Europa’s surface by energetic ions and electrons produce an atmosphere. Here we use a 3D Monte Carlo simulation, including collisions with the background O2 atmosphere, to describe recent measurements of the sodium component of the atmosphere. By constraining the model with the observational data, we attempt to reconstruct the source processes, the energy distrib...