The proliferation of both Partially Depleted SiliconOn-Insulator (PD-SOI) technology and domino circuit styles has allowed for increases in circuit performance beyond that of scaling traditional bulk CMOS static circuits. However, interactions between dynamic circuit styles and PD-SOI complicate testing. This paper describes the issues of testing domino circuits fabricated in SOI technology and...

This paper describes the characteristics comparison of bulk FINFET and SOI FINFET. The scaling trend in device dimension require limit on short channel effect through the control of subthreshold slope and DIBL characteristics.It can be achieved by proper device design. The subthreshold characteristics are plotted with the variation of gate voltage for different doping profile .This paper also c...

1. Abstract We estimate the soft error rates of FD-SOI structures according to the thicknesses of BOX(Buird OXide) layers and body bias on 65-nm and 28-nm processes by reducing the supply voltage. A Monte-Carlo based simulation is used in this work. The parasitic bipolar effect is suppressed by thicker BOX on FD-SOI structure.The simulation results are consistent with the alpha and neutron irra...

The spin-orbit interaction (SOI) of a two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge/SiGe quantum well structure. We observe weak antilocalization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrate electric field control of the Rashba S...

Silicon-on-insulator (SOI) has been used as a platform for near-infrared photonic devices for more than twenty years. Longer wavelengths, however, may be problematic for SOI due to higher absorption loss in silicon dioxide. In this paper we report propagation loss measurements for the longest wavelength used so far on SOI platform. We show that propagation losses of 0.6-0.7 dB/cm can be achieve...

Ultra Thin Body (UTB) SOI are promising alternatives for extending the MOSFET scaling. However, intrinsic parameter fluctuations still remains as one of the major challenges for the ultimate scaling and integration of UTB SOI MOSFETs. In this paper, using 3D statistical numerical simulations we investigate the impact of random discrete dopants, body thickness variations and line edge roughness ...

For the first time, we report the combined application of a SiGe source and a delta-doped + region in a PD SOI MOSFET to minimize the impact of floating body effect on both the drain breakdown voltage and the single transistor latch. Our results demonstrate that the proposed SOI structure exhibits as large as 200% improvement in the breakdown voltage and is completely immune to single transisto...

One important trend in recent years is the reduction of the silicon film thickness in SOI devices. As results of scaling this parameter several benefits have been obtained such as the elimination of the kink effect, the suppression of short-channel effects, improved subthreshold characteristics, the enhancement of carrier mobility, suppression of punchthrough and drain current overshoot and so ...

Previously, we reported the short-term immunological effects of postoperative adjuvant interferon-gamma (IFN-gamma) administration to renal cell carcinoma patients as determined by three-color flow cytometry. We now report the results of a long-term study on a larger number of subjects. Thirty-three patients with renal cell carcinoma received a prophylactic intramuscular injection of IFN-gamma ...

We have simultaneously fabricated RF power LDMOSFETs on thin-film SOI and bulk silicon wafers. This work compares their DC current–voltage ( – ), capacitance–voltage ( – ), -parameter, and 1.9-GHz load-pull characteristics and explains differences between them. The SOI LDMOSFET performance is shown to be largely similar to the performance of an equivalent bulk silicon LDMOSFET, but there are im...