Abstract Single-layer Sb2Te3 films and three-layer Sb2Te3/Sb2S3/Sb2Te3 structures are obtained by thermal vacuum deposition. Their thermoelectric characteristics have been investigated in a wide temperature range (5350 K). It is shown that the conductivity of has semiconductor behavior, resistivity an order magnitude higher than film; Seebeck coefficient 1.5 3 times film single-crystal Sb2Te3,...