While science has good knowledge of semiconductor bandgaps, there is not much information regarding the steepness of the band-edges. We find that a plot of absolute conductance, I/V versus voltage, V, in an Esaki diode or a backward diode will reveal a best limit for the band tails, defined by the tunneling joint density of states of the two band-edges. This joint density of states will give in...

The operation of 1–3 nm thick SOI MOSFETs, in double-gate (DG) mode and single-gate (SG) mode (for either front or back channel), is systematically analyzed. Strong interface coupling and threshold voltage variation, large influence of substrate depletion underneath the buried oxide, absence of drain current transients, degradation in electron mobility are typical effects in these ultra-thin MO...

Gwanghyeon Baek (SID Student Member) Jerzy Kanicki (SID Member) Abstract — The equations for the transfer characteristics, subthreshold swing, and saturation voltage of double-gate (DG) a-IGZO TFTs, when the topand bottom-gate electrodes are connected together (synchronized), were developed. From these equations, it is found that synchronized DG a-IGZO TFTs can be considered as conventional TFT...

Short channel ( approximately 80 nm) n-type single-walled carbon nanotube (SWNT) field-effect transistors (FETs) with potassium (K) doped source and drain regions and high-kappa gate dielectrics (ALD HfO(2)) are obtained. For nanotubes with diameter approximately 1.6 nm and band gap approximately 0.55 eV, we obtain n-MOSFET-like devices exhibiting high on-currents due to chemically suppressed S...

In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs...

As of yet, III-V p-type field-effect transistors (p-FETs) on Si have not been reported, due partly to materials and processing challenges, presenting an important bottleneck in the development of complementary III-V electronics. Here, we report the first high-mobility III-V p-FET on Si, enabled by the epitaxial layer transfer of InGaSb heterostructures with nanoscale thicknesses. Importantly, t...

Low operation voltage organic thin film transistors (OTFTs) were successfully fabricated with top contact structure at low fabrication temperature. The thin gate dielectric of OTFTs were deposited by atmospheric pressure plasma jet at the substrate temperature about 150 °C and under atmospheric pressure. The environment of processes would significantly improve the abilities of large area applic...

--In this paper, we proposed a new dual threshold circuit technique for reduction of subthreshold and static power dissipation. When the scaling down technology the threshold voltage takes place, due to increasing the leakage current. In this method, n-type and ptype transistor are introduced between the pull up and pull down network, the gateof inserting transistors is connected to the respect...

Abstract We propose the design and fabrication of a coplanar electrode structure for an organic metal–semiconductor field-effect transistor (OMESFET), with gate self-aligned between source drain electrodes. first used nanoimprint lithography (NIL) to define channel area device on patterned metal, then chemical wet etching create electrodes by removing metal in area. After etching, was deposited...

Sensitive flexible pressure sensors are needed in applications such as health monitoring, robotics, and wearable systems. Herein, crumpled graphene flakes network (c-GFN) channel based highly sensitive sensing field effect transistors (PRESSFETs) presented. The solution-processed PRESSFET devices developed on ultrathin (?3 ?m thick) biodegradable oxide–chitosan (GO–CS) substrate. distinctive mo...