The utility of an annealing procedure in ammonia ambient is investigated for improving the optical characteristics of InxGa1−xN nanowires (0.07 ≤ x ≤ 0.42) grown on c-Al2O3 using a halide chemical vapor deposition method. Morphological studies using scanning electron microscopy confirm that the nanowire morphology is retained after annealing in ammonia at temperatures up to 800 °C. However, sig...

We have measured and analyzed x-ray photoelectron spectra XPS of as-grown and annealed Ge33As12Se55 films compared with bulk material. We found that the as-grown film contains a large number of separated Se clusters which can coalesce with As and Ge after annealing at high temperatures. In addition, both the Ge and As 3d spectra show the presence of oxides. While the Ge oxidation increases with...

Perovskite microwires have a larger surface-to-volume ratio and better photoelectric conversion efficiency than perovskite films. The degree of crystallization also affects the optoelectrical performances microwires. Laser annealing was regarded as tool for crystallization. High light absorption induced fast heating process. A 405 nm violet laser located near peak typical films employed laser. ...

Experiments were conducted to compare the annealing of nano-porous aluminum oxide membranes by 2.45 GHz microwave radiation and by conventional (resistive element) furnace heating. The starting material was Al2O3 membranes that were 60 microm thick, 13 mm in diameter, and containing pores of approximately 200 nm diameter. Changes in the porosity and morphology were recorded from digital process...