Photocatalytic water splitting represents a promising way to produce renewable hydrogen fuel from solar energy. Ultrathin semiconductor electrodes for water splitting are of particular interest because the optical absorption occurs in the region where photogenerated charge carriers can effectively contribute to the chemical reactions on the surface. It is therefore important to manipulate and c...

Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is pr...

The reactivity of organic radicals produced by 1,1'-azobis(cyanocyclohexane) (ACN) is tuned to selectively suppress electrical conduction of small diameter single-walled carbon nanotubes, and the modified tubes are able to produce high-mobility (approximately 10 cm2 V(-1) s(-1)) and solution-processable thin-film transistors with full semiconductor device yield, promising applications in high-p...

Ternary semiconductor CdZnS films were prepared by chemical bath deposition (CBD). Effect of Zn concentration and deposition time on the forming chaarcterization of CdZnS films are investigated by the optical transmission spectra. The competition mechanism of Zn and Cd with the complexing agent NH3 to forming the complex play a critical role in the forming of Cd1-xZnxS thin film when Zn concent...

In this paper, ZnO thin film is deposited on slide glass substrate using the sol-gel process. Presenting well-defined orientation of ZnO thin films Nanostructure were obtained by dip coating of zinc acetate dihydrate, monoethanolamine (MEA), de-ionized water and isopropanol alcohol. The annealed ZnO thin films were transparent ca 85-90% in visible range with an absorption edges at about 375 nm....

In this work, the Al-rich AIN thin film is deposited on Si substrate by radio frequency (RF) sputtering to form a metal-insulator-semiconductor (MIS) structure. Al nanocrystals (nc-Al) are formed and embedded in the AIN thin film. Charge trapping/detrapping in the nc-Al leads to a shift in the flat-band voltage (VFB) of the MIS structure. The charge storage ability of the AIN thin films contain...

A diketopyrrolopyrrole (DPP) with fluorenone (FN) based low band gap alternating copolymer (PDPPT-alt-FN) has been synthesized via Suzuki coupling. PDPPT-alt-FN exhibits a deep HOMO level with a lower band gap. Fabricated organic thin film transistors using PDPPT-alt-FN as a channel semiconductor show p-channel behaviour with the highest hole mobility of 0.083 cm(2) V(-1) s(-1) measured in air.

In this study, NiTi thin films were deposited on the glass and NaCl substrates by means of magnetron sputtering method. The influence of aging temperature, over the range 300-500 oC, on phase transformation and mechanical properties of the sputtered NiTi thin films were studied by differential scanning calorimetry (DSC) and nano-indentation assay, respectively. The DSC curves showed that the ag...