We investigate the angular behavior of the upper bound of absorption provided by the guided modes in thin film solar cells. We show that the 4n limit can be potentially exceeded in a wide angular and wavelength range using two-dimensional periodic thin film structures. Two models are used to estimate the absorption enhancement; in the first one, we apply the periodicity condition along the thic...

To improve the performance of the polycrystalline thin film devices, it requires a delicate control of its grain structures. As one of the most promising candidates among current thin film photovoltaic techniques, the organic/inorganic hybrid perovskites generally inherit polycrystalline nature and exhibit compositional/structural dependence in regard to their optoelectronic properties. Here, w...

Recent progress in the field of Cu(In,Ga)Se2 (CIGS) thin film solar cell technology is briefly reviewed. New wide-bandgap Inx(OOH,S)y and ZnSx(OH)yOz buffers for CIGS solar cells have been developed. Advances have been made in the film deposition by the growth process optimization that allows the control of film properties at the microand nanolevels. To improve the CIGS cell junction characteri...

As device feature sizes shrink below 0.18 μm, shorter wavelength exposure tools are being investigated to meet the requirements for higher resolution. Understanding the optical properties of thin films and substrate materials at short wavelengths (193 nm, 157 nm, and shorter) will be necessary to develop the lithographic process. Variable Angle Spectroscopic Ellipsometry (VASE) offers nondestru...

In thin film technology, future semiconductor and display products with high performance, high density, large area, and ultra high definition with three-dimensional functionalities require high performance thin film transistors (TFTs) with high stability. Zinc oxynitride, a composite of zinc oxide and zinc nitride, has been conceded as a strong substitute to conventional semiconductor film such...

Thin-body MOSFET geometries such as fully-depleted SO1 and double-gate devices are attractive because they can offer superior scaling properties compared to bulk and thick-body SO1 devices. The electrostatics of a MOSFET limit how short of a gate length can be achieved before the gate loses control over the channel. In bulk-like devices, the device designer keeps the gate in control with gate o...

germanium nanowires (genws) were synthesized using chemical vapor deposition (cvd) based on vapor–liquid–solid (vls) mechanism with au nanoparticles as catalyst and germanium tetrachloride (gecl4) as a precursor of germanium. au catalysts were deposited on silicon wafer as a thin film, firstly by sputtering technique and secondly by submerging the silicon substrates in au colloidal solution, wh...

A compact model and simulation methodology for chalcogenide based memristor devices is proposed. From a microprocessor design view point, it is important to be able to simulate large numbers of devices within the integrated circuit architecture in order to speed up reliably the development process. Ideally, device models would accurately describe the characteristic device behavior and would be ...

generally arranged at a distance of 0.1 nm to 0.5 nm from one another. When such a substance is irradiated with X-rays having a wavelength roughly equivalent to the interatomic or intermolecular distance, the Xray diffraction phenomenon will take place. X-ray diffraction is widely used in the semiconductor field because it is nondestructive and yields crystal structure information relatively ea...

A microelectromechanical systems (MEMS) thermal flow sensing array constructed of biocompatible materials has been designed, fabricated, nd tested. In addition to the construction, the electronic biasing conditions were selected such that sensor operation was compatible with biological uids. The device comprises several thin film platinum sensing elements sandwiched in a Parylene C membrane. Th...