We propose a temperature sensor employing a ring oscillator composed of poly-Si thin-film transistors (TFTs). Particularly in this research, we compare temperature sensors using TFTs with lightlydoped drain structure (LDD TFTs) and TFTs with offset drain structure (offset TFTs). First, temperature dependences of transistor characteristics are compared between the LDD and offset TFTs. It is conf...

We are developing all-electronic sensing and diagnostic platforms based on low-cost electronics as found in smartphones. Our concept is a system that combines digital microfluidics (DMF), based on Electro Wetting on Dielectric (EWOD) with direct electrical readout of assay chemistry using simple transistors. A programmable DMF technology has thousands of electrodes, each of which contains senso...

Figure 1. a, Schematic of the “solution-shearing” printing method (inset shows chemical structure of TIPS-pentacene). b–d, Optical micrographs (cross-polarized) of solutionsheared TIPS-pentacene thin films, fabricated at different printing speeds. The printing speed and the electrical performance of the films in thin film transistor devices are listed below each of the images. Copyright Nature ...

Post-crystallization heat-treatment of metal-induced laterally crystallized polycrystalline silicon thin film using YAG solid-state laser is characterized. It is found that both the material quality and the TFT performance are related to the laser-treatment condition. The amorphous silicon fraction remaining in the polycrystalline thin film can be reduced and the performance of the thin-film tr...

Selective exposure of a hydrogenated amorphous silicon ~a-Si:H! film to a room-temperature hydrogen plasma using a patterned masking layer and a subsequent anneal at 600 °C, results in patterned polycrystalline and amorphous silicon regions. However, most of the hydrogen in the amorphous silicon is lost, leading to severe degradation in its properties. In this letter, we report the rehydrogenat...

Suehye Park (SID Student Member) Abstract — Amorphous Edward Namkyu Cho Ilgu Yun In–Ga–Zn–O thin-film transistors (TFTs) have attracted increasing attention due to their electrical performance and their potential for use in transparent and flexible devices. Because TFTs are exposed to illumination through red, green, and blue color filters, wavelength-varied light illumination tests are require...

Seung-Hyun Hur Department of Materials Science and Engineering, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801; Beckman Institute and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801; and Center for Advanced Functional Polymers, Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Sc...

The effects of dielectric-annealing gas (O2, N2 and NH3) on the electrical characteristics of amorphous InGaZnO thin-film transistor with HfLaO gate dielectric are studied in-depth, and improvements in device performance by the dielectric annealing are observed for each gas. Among the samples, the N2-annealed sample has a high saturation carrier mobility of 35.1 cm 2 /V∙s, the lowest subthresho...

In this paper, we have investigated the effect of a single Grain Boundary (GB) on the performance of decananometer-scale Thin Film Transistors (TFTs) by using the calibrated energy balance transport model and a continuous trap state distribution at the GB. We have found that the GB potential barrier suppresses the subthreshold slope and leakage current in devices, where the DIBL effect and punc...

from doctor-blade coated liquid-Si J. Zhang, M. Trifunovic, M. van der Zwan, H. Takagishi, R. Kawajiri, T. Shimoda, C. I. M. Beenakker, and R. Ishihara Delft University of Technology, Delft Institute of Microsystems and Nanoelectronics (DIMES), Feldmannweg 17, 2628CT, Delft, The Netherlands Japan Science and Technology Agency, ERATO, SHIMODA Nano-Liquid Process Project, 2-5-3 Asahidai, Nomi, Is...