The excitonic states of transition metal dichalcogenide (TMD) monolayers are heavily influenced by their external dielectric environment and depend on the substrate used. In this work, various wide band gap materials, namely hexagonal boron nitride $(h\text{\ensuremath{-}}\mathrm{BN})$ amorphous silicon $({\mathrm{Si}}_{3}{\mathrm{N}}_{4})$, under different configurations as support or encapsul...