Low power 8 bit GDI magnitude comparator is proposed in this paper which has an advantage of minimum power dissipation, reduced propagation delay and less number of transistors required as compare to conventional CMOS magnitude comparator. Proposed GDI magnitude comparator is designed at 100MHz frequency with 1.8 v supply voltage using 180nm technology using CADENCE VLSI EDA tools. The performa...

Point-functionalized carbon nanotube field-effect transistors can serve as highly sensitive detectors for biomolecules. With a probe molecule covalently bound to a defect in the nanotube sidewall, two-level random telegraph noise (RTN) in the conductance of the device is observed as a result of a charged target biomolecule binding and unbinding at the defect site. Charge in proximity to the def...

Quantum information science addresses how the processing and transmission of information are affected by uniquely quantum mechanical phenomena. Combination of two-qubit gates has been used to realize quantum circuits, however, scalability is becoming a critical problem. The use of three-qubit gates may simplify the structure of quantum circuits dramatically. Among them, the controlled-SWAP (Fre...

The high-k dielectric TiO2/ZrO2 bilayer composite film was prepared on a Si substrate by radio frequency magnetron sputtering and post annealing in N2 at various temperatures in the range of 573 K to 973 K. Transmission electron microscopy observation revealed that the bilayer film fully mixed together and had good interfacial property at 773 K. Metal-oxide-semiconductor capacitors with high-k ...

The structural and optical properties of Ge quantum dots (QDs) grown on Si(001) for mid-infrared photodetector and Ge nanocrystals embedded in oxide matrices for floating gate memory devices are presented. The infrared photoluminescence (PL) signal from Ge islands has been studied at a low temperature. The temperature- and bias-dependent photocurrent spectra of a capped Si/SiGe/Si(001) QDs infr...

We investigated the properties of pulse propagation on nonlinear traveling-wave field effect transistors (TW-FET) to develop a method for amplifying short electrical pulses. TW-FETs are a special type of FET whose electrodes are employed not only as electrical contacts but also as transmission lines. Due to the presence of electromagnetic couplings between the gate and drain lines, two differen...

Silicon nanophotonics has recently attracted great attention since it offers an opportunity for low cost opto-electronic solutions based on silicon complementary metal oxide semiconductor (MOS) technology. Photonic crystal (PhC) structures with slow photon effect are expected to play a key role in future large-scale ultra-compact photonic integrated circuits. A novel vertical-MOS-capacitor-base...

Poly-SiGe is investigated as the gate material for CMOS transistors with ultra-thin Hf02 gate dielectric. Compared with polySi, poly-SiGe reduces the gate depletion effect, and also results in thinner EOT of the gate dielectric after 1000°C annealing, with low gate leakage maintained. The Si interface quality is also better than that achieved with surface nitridation, which has been used to red...

We modulate the conductance of electrochemically inactive molecules in single-molecule junctions using an electrolytic gate to controllably tune the energy level alignment of the system. Molecular junctions that conduct through their highest occupied molecular orbital show a decrease in conductance when applying a positive electrochemical potential, and those that conduct though their lowest un...