Quantum dots have sharply defined energy levels, which can be used for high resolution spectroscopy when integrated in tunneling circuitry. Here we report dot-assisted measurements of the superconductor $NbSe_2$, using a van der Waals device consisting vertical stack $graphene-MoS_2-NbSe_2$. The $MoS_2$ tunnel barriers host naturally occurring defects function as quantum dots, allowing transpor...

Colloidal quantum dots have grown in interest as materials for light amplification and lasing in view of their bright photoluminescence, convenient solution processing and size-controlled spectral tunability. To date, lasing in colloidal quantum dot solids has been limited to the nanosecond temporal regime, curtailing their application in systems that require more sustained emission. Here we fi...

Neuromorphic computing based on single-electron circuit technology is gaining prominence because of recent claims about its massively increased computational efficiency and its increasing relevance between computer technology and nanotechnology [1], [2]. Its impact will be strongly felt maximum when single-electron circuits can operate at room temperature, based on faultand noise-tolerant neura...

Single electron transistors are studied by self-consistent 3D quantum mechanical simulation. Computation of the linear-response conductance requires the calculation of thermal ensemble averages. The evaluation of these quantities can be substantially accelerated by means of Monte-Carlo sampling. 1 Introduction A single electron transistor (SET) is a three terminal device without a classically c...

Self-assembled InGaN quantum dots were grown in the Stranski–Krastanov mode by plasma-assisted molecular beam epitaxy. The average dot height, diameter and density are 3 nm, 30 nm and 7 × 1010 cm–2, respectively. The dot density was found to decrease as the growth temperature increases. The cathodoluminescence emission peak of the InGaN/GaN multiple layer quantum dots (MQDs) was found to red sh...

We present a highly controllable double quantum dot device based on bilayer graphene. Using architecture of interdigitated gate fingers, we can control the interdot tunnel coupling between 1 to 4 GHz and mutual capacitive 0.2 0.6 meV, independently charge occupation dots. The charging energy hence size remains nearly unchanged. tuning range covers operating regime typical silicon GaAs spin qubi...

We perform strategic current injection in a small mesoscopic superconductor and control the (non)equilibrium quantum states in an applied homogeneous magnetic field. In doing so, we realize a current-driven splitting of multiquanta vortices, current-induced transitions between states with different angular momenta, and current-controlled switching between otherwise degenerate quantum states. Th...