نتایج جستجو برای: tunneling field effect

تعداد نتایج: 2345540  

2014
Sebastian Glassner Clemens Zeiner Priyanka Periwal Thierry Baron Emmerich Bertagnolli Alois Lugstein

The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction. A het...

2008
Anupam Garg

We study spin tunneling in magnetic molecules, with special reference to Fe8. The article aims to give a pedagogical discussion of what is meant by the tunneling of a spin, and how tunneling amplitudes or energy level splittings may be calculated using path integral and discrete phase integral methods. In the case of Fe8, an issue of great interest is the oscillatory tunnel splittings as a func...

2001
Yih-Yin Lin Yifei Zhang Jasprit Singh Umesh Mishra

It is known that conventional metal-oxide-silicon ~MOS! devices will have gate tunneling related problems at very thin oxide thicknesses. Various high-dielectric-constant materials are being examined to suppress the gate currents. In this article we present theoretical results of a charge control and gate tunneling model for a ferroelectric-oxide-silicon field effect transistor and compare them...

2013
Sapan Agarwal Eli Yablonovitch

While science has good knowledge of semiconductor bandgaps, there is not much information regarding the steepness of the band-edges. We find that a plot of absolute conductance, I/V versus voltage, V, in an Esaki diode or a backward diode will reveal a best limit for the band tails, defined by the tunneling joint density of states of the two band-edges. This joint density of states will give in...

2008
Feng Chi Xiqiu Yuan Jun Zheng

We theoretically propose a double quantum dots (QDs) ring to filter the electron spin that works due to the Rashba spin–orbit interaction (RSOI) existing inside the QDs, the spin-dependent inter-dot tunneling coupling and the magnetic flux penetrating through the ring. By varying the RSOI-induced phase factor, the magnetic flux and the strength of the spin-dependent inter-dot tunneling coupling...

Journal: :Physical review letters 2008
C E Creffield F Sols

We study the effect of a strong, oscillating driving field on the dynamics of ultracold bosons held in an optical lattice. Modeling the system as a Bose-Hubbard model, we show how the driving field can be used to produce and maintain a coherent atomic current by controlling the phase of the intersite tunneling processes. We investigate both the stroboscopic and time-averaged behavior using Floq...

Journal: :Journal of Physics: Conference Series 2015

Journal: :Physical review letters 2003
A Anthore H Pothier D Esteve

We have measured the tunneling density of states (DOS) in a superconductor carrying a supercurrent or exposed to an external magnetic field. The pair correlations are weakened by the supercurrent, leading to a modification of the DOS and to a reduction of the gap. As predicted by the theory of superconductivity in diffusive metals, we find that this effect is similar to that of an external magn...

1996
Y. Avishai

The fully nonlinear response of a many-level tunneling system to a strong alternating field of high frequency ω is studied in terms of the Schwinger-Keldysh nonequilibrium Green functions. The nonlinear time dependent tunneling current I(t) is calculated exactly and its resonance structure is elucidated. In particular, it is shown that under certain reasonable conditions on the physical paramet...

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