Semiconductor membrane fuel cells are a new promising R&D for solid oxide and proton ceramic cells. There is challenge of the electronic short circuit issue by using semiconductor to replace conventional electrolyte membrane. In this work, type II band alignment heterostructure based on Mg-doped ZnO can, one hand, block electrons passing through junction, other trigger ionic properties boos...

We have experimentally studied the birefringence of wurtzite GaN grown on a sapphire substrate. The measurements were done with single-mode GaN/AlGaN planar optical waveguides on c-plane grown heterostructure films. The refractive indices were found to be different for signal optical field perpendicular or parallel to the crystal c axis (n'Þn i). More importantly, we found an approximately 10% ...

Starting from a simple model of the double-mell semiconductor heterostructure capable of generating continuous-wave quantum "Bloch" oscillations, we have calculated analytically their major statistical properties, including spectral density and amplitude distribution. Other characteristics of the structure, pertaining to the Bloch oscillation, such as the dc I-V curve, rf impedance, and dc resp...

Combinatorial libraries of parallel-plate capacitors, consisting of Pt and La0.5Sr0.5CoO3 electrodes and a doped BaxSr12xTiO3 dielectric layer, have been fabricated and analyzed to systematically study the effects of dopants on device performance. Epitaxial heterostructure libraries with sharp interfaces were generated from amorphous layers on LaAlO3 substrates. Two hundred and forty different ...

Electrical transport in a modulation doped heterostructure of I~.~.s3G~.,,As/In,52Alo.48as grown on Si by molecular beam epitaxy has been measured. Quantum Hall effect and Subnikov-De Haas oscillations were observed indicating the two-dimensional character of electron transport. A mobility of 20 000 cm’/V s was measured at 6 K for an electron sheet concentration of 1.7X10” cm-’ . Transmission e...

We report a novel coupling geometry for integrated waveguide photodetectors-a hybrid vertical coupling/butt coupling scheme that allows the integration of fast, efficient, photodetectors with conventional double heterostructure waveguides. It can be employed to yield a planar, or pseudo-planar, surface that supports further levels of integration. The approach is demonstrated with a 25pm-long p-...

Owing to high interfacial conductivity, organic heterostructures hold great promises augment the electrical performances of electronic devices. In this endeavor, present work reports fabrication novel polyporphine/phthalocyanine and investigates modulation charge transport induced by structural change polyporphine its implication on ammonia sensing properties. Polyporphines materials are electr...

The 2 μm wavelength band (1800–2100 nm) emerges as a promising candidate for next‐generation optical communication. As result, silicon photonic platforms acquire great interest since they offer the ultimate minimization of systems applications. However, large bandgap and indirectness structure conventional SiGe alloy prevent their utilization efficient photodetection in band. To overcome this d...

It is well known that the excess noise factor of an avalanche photodiode (APD), which is a measure of its gain fluctuation, can be reduced by decreasing the thickness of the avalanche multiplication region. This noise reduction is attributable to the increased importance of the dead-space effect in thin layers, which prevents a carrier from impact ionizing before it travels a sufficient distanc...

Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...