The GeSe and SnSe have great potential in nuclear detector devices. Under irradiation, the formation migration of point defects may affect their properties performance significantly. In this study, a comparative study vacancy has been carried out by first-principles method. It is shown that both compounds cation vacancies are generally much easier to form than anion vacancies, migrate vacancies...

The electronic structure of vacancy-type defects in hexagonal boron nitride (h-BN) synthesized by chemical vapor deposition, promising for microelectronics, is studied. research carried out using X-ray photoelectron spectroscopy and a simulation within the density functional theory. It shown that h-BN bombardment with argon ions leads not only to near-surface layer cleaning from organic polluta...

Point defects in NiAl and other structural intermetallics have been studied using perturbed angular correlation of gamma rays (PAC), by which signals are detected from antisite atoms and/or lattice vacancies in the first few atomic shells of probe atoms. For samples of quenched NiAl having 50 to 54 at.% Ni, site-fractions of Ni-vacancies (proportional to the vacancy concentration) were found to...

α-Ga2O3 has the corundum structure analogous to that of α-Al2O3. The bandgap energy is 5.3 eV and greater than β-Ga2O3, making α-phase attractive for devices benefit from its wider bandgap. O–H O–D centers produced by implantation H+ D+ into have been studied infrared spectroscopy complementary theory. An line at 3269 cm−1 assigned H complexed with a Ga vacancy (VGa), similar case trapped an Al...

Oxidation states of MoO 3 alter the electronic properties by several orders magnitude. Oxygen vacancy-mediated intrinsic defects in vertically aligned α-MoO crystals are systematically tuned and their impact on optoelectronic analyzed.