Metal–organic vapor phase epitaxial growth of GaAsN quantum wells is monitored by in situ reflectance measurements. Correlation between the change in the reflectance intensity and nitrogen content of the quantum well is established. The reflectance as a function of time also reveals if there is deterioration of the crystalline quality during growth. This method together with X-ray diffraction a...

We report preliminary in-situ time-resolved measurements of the effect of uniaxial stress on solid phase epitaxial growth in pure Si (001) for the case of stress applied parallel to the amorphous-crystal interface. The growth rate is reduced by the application of uniaxial compression, in agreement with previous results. Additionally, the velocity continues to decrease with time. This is consist...

This work describes the detailed protocol for preparing piezoelectric macroporous epitaxial quartz films on silicon(100) substrates. This is a three-step process based on the preparation of a sol in a one-pot synthesis which is followed by the deposition of a gel film on Si(100) substrates by evaporation induced self-assembly using the dip-coating technique and ends with a thermal treatment of ...

We report on the metalorganic vapor phase epitaxial (MOVPE) growth of AlN films on sapphire substrates. The effect of precursor flow rate and nucleation layer (NL) on the film quality was investigated. The films were characterized using AFM, XRD and PL. We could realize AlN films with very smooth surfaces and narrow symmetric XRD peaks indicating low screw/mixed type dislocation densities in th...

A cross-sectional scanning transmission electron microscopy image overlayed with a strain map by geometrical phase analysis reveals how the initial nucleation layer facilitates epitaxial growth of hexagonal perovskite BaRuO3 thin film. More details can be found in article number 2100023 Woo Seok Choi, Ho Nyung Lee, and co-workers.

The preparation of a YBa2Cu3O7−x/LaNiO3/YBa2Cu3O7−x sandwich structured film on a LaAlO3 (100) substrate by a sol-gel method was investigated. YBa2Cu3O7−x/LaNiO3/YBa2Cu3O7−x tri-layer heterostructures with different epitaxial characteristics can be deposited by controlling the heat treatment temperature. X-ray diffraction and transmission electron microscopy results show that the bottom YBCO fi...

Optimisation for p-GaN epitaxial growth temperature ranges from 920°C to 1020°C was successfully conducted on InGaN/GaN blue light-emitting diodes (LEDs). These LEDs have been grown patterned sapphire substrates (PSS) via metal organic chemical vapour deposition (MOCVD). The significance of studied in detail according the structural and optoelectronic performances react depth mechanism surface ...