نتایج جستجو برای: wave semiconductor laser amplifier

تعداد نتایج: 460662  

2009
Tsukuru KATSUYAMA

The performance, functionality and productivity of the semiconductor laser have been dramatically improved since its invention in 1962. Today it came to be indispensable for our life as optical components connecting home and the Internet as well as long-distance large-capacity trunk networks. It may be said that the information revolution pulled by the explosive spread of the Internet is origin...

Journal: :journal of skin and stem cell 0
abbas majdabadi department of gaseous lasers, atomic energy organization of iran, tehran, iran mohammed abazari faculty of energy engineering and physics, amirkabir university of technology, tehran, iran; faculty of energy engineering and physics, amirkabir university of technology, p.o. box: 15875-4413, tehran, iran. tel: +98-9377326811, fax: +98- 6641 4113

results the simulation results showed that the penetration depth and temperature rise of 980 nm wavelengths were different from those of 1064 nm wavelength. it appeared that 1064 nm wavelength penetrated to deeper layers of tissue compared with 980 nm. moreover, temperature rise during 1064 nm irradiation led to temperature increase in allowable ranges. the findings proved the reason why 1064 n...

Journal: :Optics express 2007
Maik Frede Bastian Schulz Ralf Wilhelm Patrick Kwee Frank Seifert Benno Willke Dietmar Kracht

An amplifier design for efficient amplification of linearly polarized fundamental mode lasers is presented. The concept was verified by amplifying single-frequency input powers from 1 W to 20 W into output power ranges of 35 W up to 65 W. Beam quality measurements with a mode-analyzer cavity showed only minor beam quality degradation due to the amplification process.

Journal: :IEICE Transactions 2005
Keiji Yoshida Yukako Tsutsumi Haruichi Kanaya

In order to reduce the size of a wireless system, we propose a design theory for the broadband impedance matching circuit which connects an electrically small antenna (ESA) to a semiconductor amplifier. We confirmed its validity for the case of connection between a small slot loop antenna with a small radiation resistance of Ra = 0.776Ω and a semiconductor amplifier with high input impedance of...

Journal: :Optics express 2011
R P Webb J M Dailey R J Manning A D Ellis

Simultaneous conversion of the two orthogonal phase components of an optical input to different output frequencies has been demonstrated by simulation and experiment. A single stage of four-wave mixing between the input signal and four pumps derived from a frequency comb was employed. The nonlinear device was a semiconductor optical amplifier, which provided overall signal gain and sufficient c...

Journal: :Optics express 2009
Weiqi Xue Yaohui Chen Filip Ohman Jesper Mørk

We experimentally investigate the initial chirp dependence of slow and fast light effects in a semiconductor optical amplifier followed by an optical filter. It is shown that the enhancement of the phase shift due to optical filtering strongly depends on the chirp of the input optical signal. We demonstrate approximately 120 degrees phase delay as well as approximately 170 degrees phase advance...

Journal: :Applied Physics Letters 2023

Single-section quantum dash semiconductor lasers have attracted much attention as an integrated and simple platform for the generation of THz-wide flat optical frequency combs in telecom C-band. In this work, we present experimental method allowing to increase spectral width laser comb by injection a broadband noise from external amplifier that is spectrally overlapped with comb. The induces am...

2016
Alexander M. Heuer Clara J. Saraceno Kolja Beil Günter Huber Christian Kränkel

We present a mode-locked Yb:Lu2O3 laser with up to 67% of optical-to-optical efficiency. By utilizing a high brightness optically pumped semiconductor laser (OPSL) as a pump source and using a semiconductor saturable absorber mirror (SESAM) we obtained self-starting mode locking. A pulse duration of 571 fs at 4.73 W of average output power with an optical-to-optical efficiency of 67% was achiev...

Journal: :Journal of The Optical Society of America B-optical Physics 2022

The generation of a 33.7 W radially polarized output is demonstrated by way double-pass amplification in Ho:YAG thin-slab crystal. amplifier system was seeded with the beam from continuous-wave 13.2 W, 2.1 µm rod laser, which exploited gain medium bifocusing and ring-shaped pump spot to promote preferential lasing on Laguerre–Gaussian mode. By compensating for both thermally induced stress bire...

2007
Simarjeet Singh Saini Si Hyung Cho

In this paper we describe empirical models for predicting the performance of high power lasers, semiconductor optical amplifiers, and superluminescent diodes. The utility of the models is verified by comparing predicted results to actual performance of devices. Based on the model, three important parameters are identified for improving the performance of high power devices. These parameters inc...

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