This article presents a novel lateral double-diffused metal oxide semiconductor (LDMOS) with integrated triple direction high- ${k}$ gate and field dielectrics (HKGF LDMOS). The main feature of the HKGF LDMOS is that top silicon layer...

Two important properties of an RF LDMOS power transistor are the high-voltage performance and the high-frequency performance. This thesis begins with the design of an initial device model based on a Motorola RF LDMOS product. The effects of varying drift length, n-epi layer doping concentration and thickness are then investigated by simulation using Academi2d software. Each parameter is varied ...

The behaviour of the capacitances of LDMOS devices as a function of gate and drain bias is analysed using TCAD simulations and S-parameter measurements. Both simulations and measurements revealed that instead of the smooth sigmoïd shape usually seen in MOSTs, the capacitances of LDMOS devices show a distinct ridge at low values of Vds. A full analysis of this phenomena is used to propose a sign...

Silicon based technologies, SiGe HBT and CMOS, have captured almost all of the cellular handset application space with the exception of the RF power amplifier. In time will they also push GaAs out of these sockets? For cellular base stations Si LDMOS is the dominant technology, but as wireless applications move to higher frequencies, will GaAs displace Si LDMOS or lose out to the rapidly develo...

This paper reports a methodology to correlate Hot Carrier Injection (HCI) degradation mechanism regarding to electrical figures of merit on Lateral-Diffused Metal-Oxide-Semiconductor (LDMOS) transistor. This method is based on RF life test in radar operating conditions coupled to a high drain voltage in order to make visible HCI degradation. We propose drain current modeling vs. time based on a...

In this paper, a novel super-junction trench silicon-on-insulator laterally-diffused metal-oxide-semiconductor (SJT SOI LDMOS) power device with additional hole leakage paths to improve single-event burnout (SEB) performance under high liner energy transfer (LET) is proposed for the first time. The electrical characteristics and SEB of SJT LDMOS are both enhanced effectively. replacement lightl...

A novel Si/SiC heterojunction Lateral Double-diffused Metal Oxide Semiconductor with the Semi-Insulating Polycrystalline Silicon field plate (SIPOS LDMOS) is proposed in this paper for first time. The innovative terminal technology of Breakdown Point Transfer (BPT) had been applied on MOSFETs. This creative improved Voltage (BV) device, compared conventional Si LDMOS (Cov. LDMOS). In order to o...

Introduction Non-linear transistor models are being increasingly utilized and demanded by the power amplifier design community because they provide access to multiple simulator capabilities, including DC analysis, as well as analyses of small-signal, nonlinear, time domain, and complex modulation effects. The availability of accurate, validated models eliminates the need for designers to make t...

This paper describes a power amplifier, employing parallel-connected laterally diffused metal–oxide semiconductor (LDMOS) devices with optimized channel widths and bias offsets to approximate ideal square-law behavior of the overall transconductance in class-AB operation. The proposed method results in a significant linearity improvement over a large dynamic range in comparison to a conventiona...