r '-' A 400 Hz bridge des igned spec ifically fo r measurin g the res istances of platinum the rmometers is desc ribed. Wh en used in conjunction with a co nvent ional 25 ohm thermometer, the instrument ca n resolve a resistance change of 2 micro-ohm s or less, or about 20 microdegrees. It is believed to be in error by no more tha n 3 micro-ohms throughout the useful temperature ra nge of a con...

L.A. Diaz1, J. A. Garzon2, D. Gonzalez-Diaz3, L.Lopes4, M. Morales2, and C. Pecharroman5 1CINN-CSIC, Oviedo, Spain; 2USC, Santiago, Spain; 3GSI, Darmstadt, Germany; 4LIP, Coimbra, Portugal; 5ICMM-CSIC, Madrid, Spain Avalanches in timing RPCs release an average charge q̄ ≃ 1.5 − 3 pC per gap, slightly depending on the geometry, gas and field [1]. An RPC must be therefore able to evacuate the char...

Oxide-based resistive switching devices are promising candidates for new memory and computing technologies. Poor understanding of the defect-based mechanisms that give rise to resistive switching is a major impediment for engineering reliable and reproducible devices. Here we identify an unintentional interface layer as the origin of resistive switching in Pt/Nb:SrTiO3 junctions. We clarify the...

gas sensitive metal oxide layers used in fabrication of resistive gas sensors are prepared by different deposition techniques. the technical data reported on some basic and practically important specifications of these devices, although fabricated based on the same gas sensitive oxide, are anomalously different. the influence of the fabrication technique used for the deposition of the gas sensi...

Amorphous zirconium oxide thin films deposited at room temperature, sandwiched between Pt and Ti electrodes, show resistive bipolar resistive switching with good overall performance figures (retention, ON/OFF ratio and durability). A variability observed during electrical characterisation is consistent with the coexistence of two different resistive switching mechanisms within the ZrO2 layer. E...

Conductive and transparent multilayer thin films consisting of three alternating layers (TiO2/Ag/SiO2, TAS) have been fabricated for applications as transparent conducting oxides. Metal oxide and metal layers were prepared by electron-beam evaporation with ion-assisted deposition, and the optical and electrical properties of the resulting films as well as their energy bounding characteristics a...

This paper introduces the indicators for surge arrester condition assessment based on the leakage current analysis. Maximum amplitude of fundamental harmonic of the resistive leakage current, maximum amplitude of third harmonic of the resistive leakage current and maximum amplitude of fundamental harmonic of the capacitive leakage current were used as indicators for surge arrester condition mon...

We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon ...