In this work, dynamic load modulation of high power amplifiers using a varactor-based tunable matching network is presented. The feasibility of dynamic tuning and efficiency enhancement of this technique is demonstrated using a modular design approach for two existing high efficiency power amplifiers (PA), a 7-W class-E, and a 10-W class-J power amplifier PA at 1 GHz. For this purpose and for e...

Analysis and simulation are presented of the mismatched load condition for a balanced class-E power amplifier, which is based on 90° hybrids at its input and output. The performances of the 200-Watt balanced class-E amplifier, such as the output power and efficiency, were analyzed and compared to the conventional single-ended class-E power amplifier for the 1:3 VSWR mismatch condition. The simu...

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ETRI Journal, Volume 30, Number 1, February 2008 ABSTRACT⎯A highly linear and efficient GaN HEMT Doherty amplifier for wideband code division multiple access (WCDMA) repeaters is presented. For better performance, the adaptive gate bias control of the peaking amplifier using the power tracking circuit and the shunt capacitors is employed. The measured one-carrier WCDMA results show an adjacent ...

• Montelukast is an oral leukotriene receptor antagonist. It has had a UK licence since 1998 as addon therapy for the treatment of patients, 6 years or older, with mild to moderate asthma inadequately controlled on ‘as required’ short-acting β-agonists and inhaled corticosteroids. It is also licensed for prophylaxis of asthma in which the predominant component is exercise-induced bronchoconstri...

This paper presents results of investigation on the effects of technology on the performance of the class E power amplifier circuit. A typical class E circuit has been designed and simulated, for a typical UMTS Tx frequency (1.95 GHz) and output power ( 27dBm). Three different technologies have been used (silicon BJT, CMOS and GaAs HBT) and several important parameters (output efficiency, power...

In this letter, novel class-F and inverse class-F power amplifier (PA) topologies were proposed, simulated, realized and measured for 2.7–2.9GHz frequency band by using Gallium Nitride high electron mobility transistor (GaN HEMT). Realizations are made on Rogers TMM3 dielectric material which has 0.381mm thickness and 3.27 dielectric constant. Proposed class-F and inverse class-F PAs have 10W (...

The objective of this research was to design a 2.4 GHz class AB Power Amplifier (PA), with 0.18um Semiconductor Manufacturing International Corporation (SMIC) CMOS technology by using Cadence software, for health care applications. The ultimate goal for such application is to minimize the trade-offs between performance and cost, and between performance and low power consumption design. This pap...

—A 48 GHz fully integrated two stages power amplifier (PA) for mm-wave application is presented in this paper. The PA is implemented in 90 nm LP CMOS technology with Cascode topology to enhance gain and stability. The single ended PA achieves around 15 dB small signal gain, 4.5 dBm saturated output power and a peak power added efficiency of 9% in measurement. Patterned ground shield coplanar tr...

The Internet is rapidly changing from a set of wires and switches that carry packets into a sophisticated infrastructure that delivers a set of complex value-added services to end users. Services can range from bit transport all the way up to distributed value-added services like video teleconferencing, data mining, and distributed interactive simulations. Before such services can be supported ...