By means of Monte Carlo simulations coupled with a two-dimensional Poisson solver, we evaluate directly the possibility to use high mobility materials in ultra fast devices exploiting ballistic transport. To this purpose, we have calculated specific physical quantities such as the transit time, the transit velocity, the free flight time and the mean free path as functions of applied voltage in ...

In this paper we present a compact model of DoubleGate MOSFET architecture including ballistic and quasiballistic transport down to 20 nm channel length. In addition, this original model takes into account short channel effects (SCE/DIBL) by a simple analytical approach. The quasi-ballistic transport description is based on Lundstrom’s backscattering coefficient given by the socalled flux metho...

The circuits in today’s computers, cell-phone cameras, and many other electronic devices rely on the manipulation of electronic charges via CMOS technology—transistors built from a combination of “complementary” metal, oxide, and semiconductor materials. A promising “beyond-CMOS” technology [1] is spintronics, in which information is carried by spin instead of charge. Spintronics devices could ...

A noninteracting quantum-dot arrays side coupled to a quantum wire is studied. Transport through the quantum wire is investigated by using a noninteracting Anderson tunneling Hamiltonian. The conductance at zero temperature develops an oscillating band with resonances and antiresonances due to constructive and destructive interference in the ballistic channel, respectively. Moreover, we have fo...

We explore the possibility of using a double-tip STM to probe the single electron Green function of a sample surface, and describe a few important applications: (1) Probing constant energy surfaces in k-space by ballistic transport; (2) Measuring scattering phase shifts of defects; (3) Observing the transition from ballistic to diffusive transport to localization; and (4) Measuring inelastic me...

Nanotransistors typically operate in far-fromequilibrium (FFE) conditions, that cannot be described neither by drift-diffusion, nor by purely ballistic models. In carbonbased nanotransistors, source and drain contacts are often characterized by the formation of Schottky Barriers (SBs), with strong influence on transport. Here we present a model for onedimensional field-effect transistors (FETs)...

Carbon nanotube field-effect transistors (CNTFETs) have been studied in recent years as a potential alternative to CMOS devices, because of the capability of ballistic transport. In order to account for the ballistic transport we solved the coupled Poisson and Schrödinger equations for the analysis these devices. Conventionally the coupled Schrödinger-Poisson equation is solved iteratively, by ...

In this paper, we analyze the problem of quasiballistic electron transport in ultra small of mercury -cadmiumtelluride (Hg0.8Cd0.2Te -MCT) n-nn devices from hydrodynamic point view. From our study, we note that, when the size of the active layer is low than 0.1μm and for low bias application ( ) mV 9 ≥ , the quasi-ballistic transport has an important effect. Keywords—Hg0.8Cd0.2Te semiconductor,...

Room-temperature (RT) ballistic transport of electrons is experimentally observed and theoretically investigated in III-nitrides. This has been largely investigated at low temperatures in low band gap III-V materials due to their high electron mobilities. However, their application to RT ballistic devices is limited by their low optical phonon energies, close to KT at 300 K. In addition, the sh...

Generalized hydrodynamics predicts universal ballistic transport in integrable lattice systems when prepared in generic inhomogeneous initial states. However, the ballistic contribution to transport can vanish in systems with additional discrete symmetries. Here we perform large scale numerical simulations of spin dynamics in the anisotropic Heisenberg XXZ spin 1/2 chain starting from an inhomo...