نتایج جستجو برای: band gap shift

تعداد نتایج: 391917  

, عباس مختاری, ,

Thin film samples of Ti-doped ZnO were grown on sapphire (0001) substrates by pulsed laser deposition (PLD). The magnetic moments were measured by SQUID magnetometry and the films were ferromagnetic at room temperature. The Faraday rotations and magnetic circular dichroisms (MCD) were measured as a function of energy at the range of 1.5-4 eV, and carrier concentrations were obtained from Hall e...

Journal: :iranian journal of science and technology (sciences) 2013
m. aryadoust

the purpose of this paper is the generalization of structure factor for rods by polygon section in two dimensional phononic crystals. if we use the plane wave expansion method (pwe) for the propagation of acoustic waves in 2d phononic crystals, structure factor will be an important quantity. in order to confirm the obtained relations, we have calculated the band structure for xy and z vibration...

Bigdeli, Tania, Motiee, Fereshteh,

Introduction: In this research, TiO2-Zr nano-photocatalyst was firstly developed with the aim of improving the photocatalytic activity of titanium dioxide via sol-gel method. The recovery of catalysts in acidic, alkaline and thermal conditions was also studied. Method: This research was done on a laboratory scale. The structures and properties were recognized with (BET), (FT-IR), (FE-SEM), and...

2006
J. Zhao J. Chen Z. C. Feng J. L. Chen R. Liu G. Xu

Band gap blue shift of InGaAs/InP multiple quantum well (MQW) structures by impurity-free vacancy disordering (IFVD) is studied by photoluminescence (PL) and secondary ion mass spectrum (SIMS). SiO2, Si3N4, and spin on glass (SOG) were used for the dielectric layers to create the vacancies. The results indicate that the band gap blue shift varies with the different dielectric layers and depends...

2008
Su-Huai Wei

Using a band-structure method that includes the correction to the band gap error in the local density approximation (LDA), we study the chemical trends of the band gap variation in III-V semiconductors and predict that the band gap for InN is 0.8 ± 0.1 eV, which is much smaller than previous experimental value of ∼ 1.9 eV. The unusually small band gap for InN is explained in terms of the high e...

پایان نامه :دانشگاه تربیت معلم - تهران - دانشکده علوم 1393

in this thesis, structural, electronical, and optical properties of inverse pervskite(ca3pbo) in cubic phase have been investigated.the calculation have been done based on density functional theory and according to generalized gradiant approximate (gga) as correlating potential. in order to calculate the configurations, implementing in the wien2k code have been used from 2013 version. first of ...

2016
Baohe Yuan Qi Xu Linfei Liu Xiying Ma

The influences of the filling rate on the photonic band gap properties of the two dimensional hex photonic crystals are investigated using the finite-difference time-domain method. When the filling rate f varies from 0.227 to 0.735 reminding the refractive index as 5, the number of the photonic band gaps decreases from 5 to 2 bands, the width of the photonic band gap between the transmit peaks ...

Journal: :Physical review letters 2016
Z Lebens-Higgins D O Scanlon H Paik S Sallis Y Nie M Uchida N F Quackenbush M J Wahila G E Sterbinsky Dario A Arena J C Woicik D G Schlom L F J Piper

We have directly measured the band gap renormalization associated with the Moss-Burstein shift in the perovskite transparent conducting oxide (TCO), La-doped BaSnO_{3}, using hard x-ray photoelectron spectroscopy. We determine that the band gap renormalization is almost entirely associated with the evolution of the conduction band. Our experimental results are supported by hybrid density functi...

1997
Y. Dou R. G. Egdell G. Beamson

The influence of n-type doping CdO with In or Y has been investigated by high-resolution ultraviolet and x-ray photoemission spectroscopy. It is found that core levels and valence band features suffer a shift to high binding energy due to doping. However this shift is less than the change in the width of the occupied conduction band. This provides a direct measurement of band gap shrinkage as a...

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