The impact of high-voltage-high-frequency (HVHF) amplifiers on echo-signal quality is greater with very-high-frequency (VHF, ≥100 MHz) ultrasound transducers than with low-frequency (LF, ≤15 MHz) ultrasound transducers. Hence, the bias voltage of an HVHF amplifier must be stabilized to ensure stable echo-signal amplitudes. We propose a bias-voltage stabilizer circuit to maintain stable DC volta...

This paper reports impressive improvements in the optical and electrical performance of metal-oxide-semiconductor (MOS)-structure silicon solar cells through the incorporation of plasmonic indium nanoparticles (In-NPs) and an indium-tin-oxide (ITO) electrode with periodic holes (perforations) under applied bias voltage. Samples were prepared using a plain ITO electrode or perforated ITO electro...

This paper presents a design of an UWB downconversion integrated CMOS resistive ring mixer with Linear Voltage Regulator (LVR), to supply required biasing voltages for the mixer section. The designed mixer circuit has been optimized for using in heart rate extraction system with microwave Doppler radar at 2.4GHz frequency. This mixer needs 2 DC bias voltages equal to 0.5 and 1 volts for its bes...

The minimum supply voltage in low-voltage circuits can be defined as Vsup,min = 2(Vgs+Vsat) [1]. Low-voltage circuits are able to operate on a supply voltage of two stacked gate-source voltages and two saturation voltages. Differential amplifiers are biased with a transistor feeding a differential pair, where the current level is set by the bias transistor. The minimum input voltage in a NMOS i...

The magnetic state of a spintronic device is usually controlled by magnetic contacts or a transverse electric field generated by side gates. In this work, we consider a graphene nanojunction in the presence of a bias voltage that leads to magnetic phase transitions in the system. Combining the non-equilibrium Green’s function with the Hubbard model, our self consistent calculation reveals that ...

Time-periodic perturbation can be used to modify the transport properties of the surface states of topological insulators, specifically their chiral tunneling property. Using the scattering matrix method, we study the tunneling transmission of the surface states of a topological insulator under the influence of a time-dependent potential and finite gate bias voltage. It is found that perfect tr...

The transconductance characteristics of MOS transistors realized in 0.18 p n CMOS technology have B zerotemperature coefticient (ZTC) bias point. The presence of this point influences performance of both analog and digital circuits. The offset voltage drift in a saurce-coupled differential pair strongly increases, if the transistor drain currents are equal to the bias currents of ZTC point. It ...