نتایج جستجو برای: breakdown voltage

تعداد نتایج: 136077  

2013

It has been reported that breakdown voltage is affected by several factors, such as moisture, particles, acidity, and pressure [3,4,5,6]. The objective of this study is to investigate the dependency of the breakdown voltage on moisture using a representative set of oil samples and to point out the advantages of online moisture measurement. The Effect of Moisture on the Breakdown Voltage of Tran...

2010
Bin Lu Edwin L. Piner

In this letter, we demonstrate 27% improvement in the buffer breakdown voltage of AlGaN/GaN high-electron mobility transistors (HEMTs) grown on Si substrate by using a new Schottky-drain contact technology. Schottky-drain AlGaN/GaN HEMTs with a total 2-μm-thick GaN buffer showed a threeterminal breakdown voltage of more than 700 V, while conventional AlGaN/GaN HEMTs of the same geometry showed ...

2009
John S. Suehle

The present understanding of wear-out and breakdown in ultrathin ( 5 0 nm) SiO2 gate dielectric films and issues relating to reliability projection are reviewed in this article. Recent evidence supporting a voltage-driven model for defect generation and breakdown, where energetic tunneling electrons induce defect generation and breakdown will be discussed. The concept of a critical number of de...

A. Afshar and M.R. Vaezi,

Titanium is a highly reactive metal so that a thin layer of oxide forms on its surface whenever exposed to the air or other environments containing oxygen. This layer increases the corrosion resistance of titanium. The oxide film is electrochemically formed through anodizing. In this study, anodizing of titanium was performed in phosphate-base solutions such as H3Po4, NaH2Po4, and Na2Hpo4 at 9....

2015
Priya Singh

-------------------------------------------------------ABSTRACT--------------------------------------------------In this Paper an On chip High Voltage Generator with bulk CMOS process using Polysilicon Diodes is presented. As the polysilicon diodes are completely isolated from the bulk so the output voltage is not limited by the junction breakdown voltage of CMOS in charge pump circuit. The out...

Journal: :amirkabir international journal of electrical & electronics engineering 2015
m. hayati s. roshani

a new output structure for class e power amplifier (pa) is proposed in this paper. a series lc resonator circuit, tuned near the second harmonic of the operating frequency is added to the output circuit. this resonator causes low impedance at the second harmonic. the output circuit is designed to shape the switch voltage of the class e amplifier and lower the voltage stress of the transistor. t...

Journal: :Journal of Electrical Engineering and Technology 2010

2015
Peter Bletzinger

Diffuse electron-beam ionized discharges break down into arc discharges under three different conditions: static (no discharge orE-beam), dynamic (discharge on) and pulsed (inductive) overvoltage at switch-off. Dynamic breakdown voltages are lower than static breakdown voltages but in normal operation the discharge "on" voltage is kept to a minimum. The maximum load voltage will only be present...

Journal: :IEEE Journal of Solid-State Circuits 2007

2012
Johanna Virkki

This study focuses on the effects of different temperatures and temperature cycling on breakdown voltages of tantalum capacitors. High and low temperature tests and temperature cycling tests were done. In all tests the used temperatures were inside component’s operating temperature limits. After the tests, capacitors were tested for their breakdown voltage. According to results of this research...

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