In this work, we investigated the use of a homogeneous Al-doped zinc oxide (AZO) buffer layer to improve the performance of an organic light-emitting diode (OLED) device fabricated on an AZO anode. For this, 10-nm-thick AZO buffer layers with Al doping concentrations of 3.1, 4.1, and 5.1 at % were grown on 140-nm-thick AZO anode films containing 2.1 at % Al by atomic layer deposition. The elect...

In this work, we present an experimental technique for obtaining highly ordered L1 FePt-oxide thin film media at moderate deposition temperatures. In most previous studies, a FePt-Oxide layer is directly deposited on a (001) textured MgO layer. By introducing a buffer layer in between the FePt-oxide layer and the MgO underlayer, we are able to substantially enhance the L1 ordering of the FePt-o...

This paper demonstrates the design of an Arrayed Waveguide Gratings (AWG) based optical switch. In the design both physical and network layer analysis is performed. The physical layer power and noise analysis is done to obtain Bit Error Rate (BER). This has been found that at the higher bit rates, BER is not affected with number of buffer modules. Network layer analysis is done to obtain perfor...

Atomic hydrogen exposures on a monolayer graphene grown on the SiC(0001) surface are shown to result in hydrogen intercalation. The hydrogen intercalation induces a transformation of the monolayer graphene and the carbon buffer layer to bi-layer graphene without a buffer layer. The STM, LEED, and core-level photoelectron spectroscopy measurements reveal that hydrogen atoms can go underneath the...

The role of the substrate on the morphology of nanometer size clusters fabricated by buffer layer assisted growth (BLAG) was studied using scanning tunneling microscopy. Clusters of Fe and Co were deposited on Ag(111), Cu(100), Rh(111), and Pt(111) surfaces using identical BLAG parameters, which are temperature, as well as metal and buffer layer coverage. Semi-hemispherical clusters are found o...

In this paper, we present a model for vulnerability analysis that enables us to mitigate the complexity of modern systems through well-defined layers of abstraction. We use this model to build a new framework for vulnerability classification. Finally, we present our results classifying buffer overflow vulnerabilities.

In order to reduce the dislocation density and improve the performance of high indium content In0.82Ga0.18As films, the design of double buffer layers has been introduced into the In0.82Ga0.18As/InP heterostructure. Compared with other buffer layer structures, we introduce an InP thin layer, which is the same as the substrate, into the In0.82Ga0.18As/InP heterostructure. The epitaxial layers an...