In this paper, the threshold voltage of fully depleted silicon on insulator device with geometry scale down below 100nm is investigated deeply. All the device simulations are performed using SILVACO Atlas device simulator. Several ways to control the threshold voltage are proposed and simulated. Threshold voltage changing with the silicon film thickness, channel doping concentration, gate oxide...

The patch clamp-liposome technique was used to examine the stretch sensitivity of a model membrane ion channel, gramicidin A, in membrane patches of different bilayer thickness. We found that small changes in phospholipid acyl chain length (i.e., PC-20 to PC-18) can switch gramicidin A from a stretch-activated to a stretch-inactivated channel. The demonstration that subnanometer changes in bila...

Channel routing is an important phase of physical design of LSI and VLSI chips. The channel routing method was first proposed by Akihiro Hashimoto and James Stevens [1]. The method was extensively studied by many authors and applied to different technologies. At present there are known many effective heuristic algorithms for channel routing. A. LaPaugh [2] proved that the restrictive routing pr...

449 Abstract— We have analyzed channel doping and dimensions(channel length, width and thickness) for the optimum subthreshold characteristics of DG(Double Gate) MOSFET based on the model of MicroTec 4.0. Since the DGMOSFET is the candidate device to shrink short channel effects, the determination of design rule for DGMOSFET is very important to develop sub-100nm devices for high speed and low ...

Effects of annealing treatment after equal channel angular pressing (ECAP) on the interface properties and shear bond strength of Al/Cu bimetallic rods were investigated. For the as-deformed samples, the one with two passes of ECAP indicated higher shear bond strength. Formation of a layer of intermetallic compounds after annealing treatment is confirmed. In general, by increasing annealing tem...

This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...

583 Abstract— In this paper, subthreshold swing characteristics have been presented for double-gate MOSFETs, using the analytical model based on series form of potential distribution. Subthreshold swing is very important factor for digital devices because of determination of ON and OFF. In general, subthreshold swings have to be under 100mV/dec. The channel length L g is varied from 30nm to 100...

This study investigates geometrical variability on the sensitivity of the junctionless tunneling field effect transistor (JLTFET) and Heterostructure JLTFET (HJLTFET) performance. We consider the transistor gate dielectric thickness as one of the main variation sources. The impacts of variations on the analog and digital performance of the devices are calculated by using computer aided design (...

this study seeks to examine how a company can select the best intermediary for its marketing channels with minimum of criteria and time. a theoretical framework is proposed based on the most important tasks of intermediary and the criteria to measure them. there are four basic tasks and thirty criteria in three independent levels. subsequently, an exploratory case study in iranian food industry...