The continuous scaling down of feature size in Silicon technology has resulted in several technological and fundamental hindrances. The researchers started to look for new nanoscale devices those can replace CMOS transistors in digital circuits. The nanowire transistor, FinFET, Carbon Nanotube field effect transistor (CNFET), tunnel field effect transistor (TFET), and single electron transistor...

There is a need to explore circuit designs in new emerging technologies for their rapid commercialization to extend Moore’s law beyond 22 nm technology node. Carbon nanotube based transistor (CNFET) has significant potential to replace CMOS in the future due to its better electrostatics and higher mobility. This paper presents a complete optimal design of an inverting amplifier in CMOS, CNFET a...

In this paper, we describe the development of device models and tools for the design of the carbon nanotube FET (CNFET). Both HSPICE model and Verilog-A model for CNFET including typical device/circuit level non-idealities have been developed. They can be used for design of nanotube transistor circuits as well as to study performance benefits of the new transistor.

This paper presents a high-speed and high-performance CNFET-based Full Adder cell for low-voltage applications. The proposed Full Adder cell is composed of two separate modules with identical hardware configurations which generate the Sum and Cout signals in a parallel manner. The great advantage of the proposed structure is its very short critical path which is composed of only two CNT pass-tr...

Carbon Nanotube Field Effect Transistors (CNFETs), consisting of semiconducting single-walled Carbon Nanotubes (CNTs), show great promise as extensions to silicon CMOS and in large-area electronics. While there has been significant progress at a single-device level, a major gap exists between such results and their transformation into VLSI CNFET technologies. Major CNFET technology challenges i...

Carbon nanotube (CNT) field-effect transistors (CNFETs), as one of the promising candidate emerging technologies, have distinctive device-level characteristics compared to conventional CMOS technology. Logical effort approach, which is an efficient approach for fast delay estimation in CMOS technology, however, is not universally applicable for CNFET-based circuits. In this work, we first ident...

Carbon nanotube (CNT) field-effect transistors (CNFETs) are a promising emerging technology projected to achieve over an order of magnitude improvement in energy-delay product, a metric of performance and energy efficiency, compared to silicon-based circuits. However, due to substantial imperfections inherent with CNTs, the promise of CNFETs has yet to be fully realized. Techniques to overcome ...

Recent years have witnessed a burst of experimental activity concerning algorithmic self-assembly of nanostructures, motivated at least in part by the potential of this approach as a radically new manufacturing technology. Our specific interest is in the self-assembly of Carbon-Nanotube Field Effect Transistor (CNFET) circuits. Our research is focused on developing a new theoretical foundation ...

CNFET is generally considered to be one of the most appealing next generation transistors because of its high current carrying capacity and ballistic transport property. This paper investigates the performance analysis of Dual-X Current Conveyor with the CNFET technology, by varying the CNT diameter at 32nm technology node. Current Bandwidth, Input and Output Port resistances of the device alon...

In this paper, a reconfigurable, low power four quadrant memristor and carbon nanotube field effect Transistor (CNFET) based analog multiplier is proposed. The circuit is verified by extensive HSPICE simulations using experimentally verified memristor and Stanford CNFET models that have been calibrated for 90% accuracy at the 32nm technology node. The proposed multiplier has an input range of ±...