This article presents energy-efficient quaternary minimum and maximum logic circuits based on carbon nanotube field-effect transistor (CNTFET). The specific features of CNTFET, such as the possibility of determining the desired threshold voltages which are obtained by acquiring suitable diameters for carbon nanotubes, facilitate designing efficient circuits with multiple threshold voltages. The...

Carbon nano tube devices are considered as a better replacement for CMOS technology nowadays due to its decreased sizing and increased performance. Resistive open and bridging faults play vital role in the dynamic fault analysis. These faults are important since the number of interconnects have increased. In this study we discuss the effect of open and bridging defects along with the variation ...

Modulo 2+1 multiplier is one of the critical components in the area of digital signal processing, residue arithmetic, and data encryption that demand high-speed and low-power operation. In this paper, a new circuit implementation of a high-speed low-power modulo 2+1 multiplier is proposed. It has three major stages: partial product generation stage, partial product reduction stage, and the fina...

This paper deals with the propagation delay comparison of half adder with different FETs; such as MOSFET, CNTFET, FINFET. Nanotechnology is the promising field which functions at the molecular level to replace the conventional use of classical CMOS. By simulation, the best part is got that CNTFET shows lesser delay for half adder circuit.

In this paper at first a brief review of carbon nanotubes (CNTs) is given and then an extensive survey of CNTFET (carbon nanotube field effect transistor) based logic circuits are discussed with the most recently reported CNTFET logic circuits. Keywords— MOSFETs, technology scaling, CNTFETs, carbon nanotubes (CNT), chiriality.

The method opted for accuracy, and no existing studies are based on this method. A design characteristic survey of a new small band gap semiconducting Single Wall Carbon Nano Tube (SWCNT) Field Effect Transistor as photodetector is carried out. In the proposed device, better performance achieved by increasing diameter introducing single halo (SH) doping in channel length CNTFET device. This pap...

The features of CNT (Nanotube Carbon) are fascinating to study due their unique structural and electrical capabilities. small structure the in Field-Effect Transistor technology can produce a smaller device with better performance. In this work, Taguchi method had been implemented optimize Carbon Nanotube (CNTFET). Minitab 19 software used carry out analysis. Three design parameters (diameter C...

Double-gate carbon nanotube field effect transistors (DGCNTFETs) are novel devices showing an interesting property allowing to control the por n-type behavior during the device operation. This opens up the opportunity for novel design paradigms. Based on a compact physical model of these devices, we demonstrate the benefit of designing field-programmable gate arrays (FPGAs) using fine-grain DG-...

As silicon semiconductor device feature size scales down to the nanometer range, planar bulk CMOS design and fabrication encounter significant challenges nowadays. Carbon Nanotube Field Effect Transistor (CNTFET) has been introduced for high stability, high performance and low power SRAM cell design as an alternative material. Technology scaling demands a decrease in both VDD and VT to sustain ...

This paper discusses the device physics of carbon nanotube field-effect transistors (CNTFETs). After reviewing the status of device technology, we use results of our numerical simulations to discuss the physics of CNTFETs emphasizing the similarities and differences with traditional FETs. The discussion shows that our understanding of CNTFET device physics has matured to the point where experim...