The in-plane effective electron mass (m i) in narrow Ga0.47In0.53As/InP quantum wells is strongly dependent on the quantization energy. Cyclotron resonance in a series of quantum wells with well widths down to 15 Å reveals a mass enhancement of up to 50% (m i50.065m0) over the bulk value of Ga0.47In0.53As. This effect is caused by the nonparabolicity of the conduction band and wave function pen...

CdSe is used as a prototype to show the implications of valence-band degeneracy for the optical properties of strongly quantum-confined nanocrystals. Absorption spectra and photoluminescence spectra obtained under intermediate and strong pulsed excitation show the presence of new structures. The energy levels for the electron and the hole are calculated with the spherical confinement, the nonpa...

This paper examines the impact of band structure on deeply scaled III–V devices by using a self-consistent 20-band sp3d5s∗-SO semiempirical atomistic tight-binding model. The density of states and the ballistic transport for both GaAs and InAs ultrathin-body n-MOSFETs are calculated and compared with the commonly used bulk effective mass approximation, including all the valleys (Γ, X , and L). ...

The conductivity effective masses of electrons and holes in Si are calculated for carrier temperatures from 1 to 3000 K. The temperature dependence of the electron mass is calculated by use of a phenomenological model of conduction-band nonparabolicity that has been fitted to experimental measurements of the dependence of the electron conductivity effective mass on carrier concentration. The ho...

The electron subband structure in a thin (100) silicon film is analyzed based on a two-band k·p theory. For unprimed subbands the dependence of the nonparabolicity parameter on film thickness is obtained. The two-band k·p theory gives a thickness dependence of the effective masses for primed subbands. Limitations of the model are discussed. The importance of the nonparabolicity parameter depend...

The non-parabolicity, temperature dependence of an effective mass and scattering mechanisms in PbTe, PbSe, PbS are considered. The methods of investigation of non-parabolicity based upon measurement of thermoelectric power in strong magnetic fields and Nernst-Ettingshausen coefficient (together with other kinetic coefficients) are discussed. The results given by these methods are shown and disc...

Band-structure effects on channel carrier density in the ultrathin-body end of the ITRS roadmap silicon (100) n-type metal oxide semiconductor field effect transistors (MOSFETs) are assessed here using a semi-empirical nearest-neighbor sp 3 d 5 s à tight-binding model with spin-orbit interaction. The calculations focus on the body thickness range between 10 and 18 atomic layers ($1:5{2:5 nm). A...

Spin-resolved cyclotron resonance is observed in InSb/AlInSb quantum-well heterostructures. Spin-resolved transitions are identified for fields greater than 2.2 T and confirmed by k ·p modeling. The cyclotron effective mass is calculated for a range of fields up to 11.5 T and is indicative of the strong nonparabolicity in this material. Resonant coupling is observed between the ground and first...