Single-crystalline cobalt silicide/SiO(x) nanocables have been grown on Co thin films on an SiO(2) layer by a self-catalysis process via vapor-liquid-solid mechanism. The nanocables consist of a core of CoSi nanowires and a silicon oxide shell with a length of several tens of micrometers. In the confined space in the oxide shell, the CoSi phase is stable and free from agglomeration in samples a...

Cobalt monosilicide, CoSi, belongs to the new class of materials, featuring Weyl nodes in bulk band structure, located very close Fermi energy. By shifting chemical potential into these using Fe-doping, quantum effects like chiral anomaly and weak anti localization have been evidenced. However, behavior with respect doping concentration is largely unexplored. Crystal structure electrical transp...

The damage in epitaxial Co& films 500 nm thick grown on Si( 111) produced by roomtemperature implantation of 150 keV **Si were investigated by 2-MeV 4He channeling spectrometry, double-crystal x-ray diffractometry, and electrical resistivity measurements. The damage in the films can be categorized into two types. In lightly (heavily) damaged CoSi, the damage is in the form of point-like (extend...

In this work, cobalt silicide nanowires were synthesized by chemical vapor deposition processes on Si (100) substrates with anhydrous cobalt chloride (CoCl2) as precursors. Processing parameters, including the temperature of Si (100) substrates, the gas flow rate, and the pressure of reactions were varied and studied; additionally, the physical properties of the cobalt silicide nanowires were m...

The relationship between emissivity, delay time, and surface growth for metastable solidification of CoSi-62 at. % eutectic alloys is reported from undercooling experiments conducted using electrostatic levitation. A fraction of the undercooled melt is first solidified to CoSi2 with subsequent nucleation in the mushy-zone of CoSi after an observed delay time. During this double recalescence eve...

We report the simultaneous and selective synthesis of single-crystalline Co(n)Si NWs (n = 1-3) and their corresponding crystal structures--simple cubic (CoSi), orthorhombic (Co(2)Si), and face-centered cubic (Co(3)Si)--following a composition change. Co(n)Si NWs were synthesized by placing the sapphire substrates along a temperature gradient. The synthetic process is a successful demonstration ...

Replicating activity of SV40 origin-containing plasmid was tested in human cells as well as in monkey CosI cells. All the plasmids possessing SV40 ori sequences could replicate, even in the absence of SV40 T antigen, in human HL-60 and Raji cells which are expressing c-myc gene at high level. The copy numbers of the replicated plasmids in these human cells were 1/100 as high as in monkey CosI c...

Graphene grown on an ultrathin CoSi/CoSi 2 silicide layer atop a SiC(0001) substrate and intercalated by Au was studied. Intercalation of found to occur at temperature 500 o C, it is accompanied the formation gold under graphene with stoichiometry close Si. The study electronic structure system in region (K) point surface Brillouin zone revealed quasi-freestanding character linear spectrum π st...

CoSi particles on a silica support, synthesized by metal organic chemical vapor deposition (MOCVD) of Co(SiCl(3))(CO)(4) as a precursor at atmospheric pressure and moderate temperature in a fluidized bed reactor, show high catalytic activity and selectivity in naphthalene hydrogenation.