Low-cost and high-yield preparation of CuInSe2 films is the bottleneck for promising CuInSe2-based thin film solar cells. Here, we developed a simple, safe and cost-effective method using thioacetic acid to fabricate the absorber films of CuIn(S,Se)2 (CISSe). Dissolution of Cu2O and In(OH)3 in thioacetic acid was attributed to the strong coordination ability of S. The adhesive precursor solutio...

The determination of the electrical conversion efficiency (ηC) is particularly important to evaluate performance a solar cell. For evaluation by considering ideal cell characterized an absence parasitic resistances and using characteristic equation which corresponds equivalent diagram, we determine parameters such as: saturation current density (J0), short-circuit (Js...

Layered multiferroic materials exhibit a variety of functional properties that can be tuned by varying the temperature and pressure. As-synthesized $\mathrm{CuIn}{\mathrm{P}}_{2}{\mathrm{S}}_{6}$ is layered material displays ferrielectric behavior at room temperature. When synthesized with Cu deficiencies, spontaneously phase segregates to form paraelectric ${\mathrm{In}}_{4/3}{\mathrm{P}}_{2}{...

CuInSe2 and CuInS2 form a continuous solid solution in which the optical bandgap varies from 1.0 to 1.55 eV [1]. By reacting CuInSe2 films in a flowing H2S/Ar atmosphere, the films can be completely converted to CuInS2 or converted to a graded CuIn(Se1-ySy)2 film, depending on processing conditions. A phenomenological model of the reaction/diffusion process is presented wherein H2S reacts with ...

Ordered CuIn(1-x)GaxSe2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy ...

Type transformation in CuInSe2 and CuInS2 solar cells is an important issue with far reaching consequences. In the present study, the presence of a p-n homojunction inside CuInS2 in a TiO2/CuInS2 device is revealed with a detailed impedance spectroscopy and capacitance study. A n-type CuInS2 film with a thickness of 40 nm is found at the TiO2 n-type /CuInS2 p-type interface. The effective donor...

Abstract Chalcopyrite semiconductors are widely used as absorbers in thin film solar cells, especially flexible due to their high power conversion efficiency. They also have interesting mechanical properties, making them promising materials for flexible, light, and cells. In this work, we report the first-principle calculations of lattice constant bulk modulus CuInS 2 , CuInSe CuIn(S,Se) absorb...