Two different growth modes of large-area hexagonal boron nitride (h-BN) film, a conventional chemical vapor deposition (CVD) growth mode and a high-pressure CVD growth mode, were compared as a function of the precursor partial pressure. Conventional self-limited CVD growth was obtained below a critical partial pressure of the borazine precursor, whereas a thick h-BN layer (thicker than a critic...

To improve the understanding on CNT growth modes, the various processes, including thermal CVD, MP-CVD and ECR-CVD, have been used to deposit CNTs on nanoporous SBA-15 and Si wafer substrates with C(2)H(2) and H(2) as reaction gases. The experiments to vary process parameter of DeltaT, defined as the vector quantities of temperature at catalyst top minus it at catalyst bottom, were carried out ...

multiwall carbon nanotubes (mwcnts) are grown via chemical vapour deposition method directly on a stainless steel substrate. raman spectroscopy and transmission electron microscopy are the techniques chosen to characterize the structure of the synthesized carbon nanotubes: few structural defects are detected. after their removal from the stainless steel substrate, the as-grown mwcnts are then a...

the growth rate and uniformity of carbon nano tubes (cnts) based on chemical vapor deposition (cvd) technique is investigated by using a numerical model. in this reactor, inlet gas mixture, including xylene as carbon source and mixture of argon and hydrogen as  carrier gas enters into a horizontal cvd reactor at atmospheric pressure. based on the gas phase and surface reactions, released carbon...

A chemical equilibrium study was performed to investigate the effect of growth parameters on the constitution in ZrC films grown by chemical vapor deposition (CVD). The equilibrium analysis of the Zr–C–H system demonstrated that ZrC (fcc) deposition is favorable and that a certain minimum amount of hydrogen should prevent co-deposition of elemental carbon over a wide range of temperature, press...

This article discusses the growth of silicon and related materials using ultra-high vacuum chemical vapor deposition (UHV/CVD). This growth technique is well suited for deposition of strained epitaxial layers and also layers with metastable concentrations of impurities such as boron and carbon. In UHV/CVD, growth kinetics and the incorporation of various atoms other than silicon are determined ...

A novel method is presented for growth of polycrystalline silicon films on amorphous substrates at temperatures of 540-575 “C. Grain nucleation and grain growth are performed in two steps, using Si nanocrystals as nuclei (“sceds’“,L The nanocrystal seeds are produced by excimer laser photolysis of disilane in a room temperature flow cell. Film (grain) growth occurs epitaxially on the seeds in a...

In this report we review the growth of indium oxide (In2O3) nanostructures, including octahedral nanocrystals (NCs), nanobelts (NBs), nanosheets (NSs), and nanowires (NWs), by hot-wall chemical vapor deposition (HW-CVD). This system is highly controllable, allowing the user to easily access different growth regimes – each corresponding to the growth of a different nanostructure – by changing gr...

Single-walled carbon nanotube (SWCNT) was synthesized from short nanotubes using chemical vapor deposition (CVD) and the associated factors affecting the re-growth of the SWCNT were both investigated and optimized. Long, dense nanotubes were prepared from a mixture of acetylene and ethanol on airannealed ST-cut quartz substrates by hot-wall CVD. Raman and photoluminescence analyses of the resul...