We show that deep level doping of Czochralski-grown silicon wafers is capable of providing high resistivity handle wafers suitable for radio frequency integrated circuits. Starting from n-type Czochralski silicon wafers having a nominal resistivity of 50 cm, we use ion implantation and subsequent annealing to increase the resistivity of the wafers to over 10 k cm at room temperature. Coplanar w...

The binary phase diagram CaF2–SrF2 was investigated by differential thermal analysis (DTA). Both substances show unlimited mutual solubility. An azeotropic point showing a minimum melting temperature of Tmin = 1373 C for the composition Ca0.582Sr0.418F2. Close to this composition, homogeneous single crystals up to 30mm diameter without remarkable segregation could be grown by the Czochralski me...

Results of tests on NaI scintillation crystals operated at cryogenic temperatures are described. Crystals grown using both the Bridgeman-Stockbarger and Czochralski techniques were tested. Light output and scintillation pulse shape properties are assessed as functions of temperature using gamma and 252 Cf neutron sources and the results are interpreted with a view to optimising detector perform...

Single crystals of intermediate valent EuPd$_2$Si$_2$ were grown from an Eu-rich melt by the Bridgman as well Czochralski technique. The chemical and structural characterization extracted single crystalline Czochralski-grown specimen yielded a slight variation Si-Pd ratio along growth direction confirms existence finite Eu(Pd$_{1-m}$Si$_m$)$_2$ homogeneity range. thorough physical carried out o...

The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1MeV neutron equivalent fluence of 1x10 cm the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measure...

We report laser-induced cooling with thulium-doped BaY2F8 single crystals grown using the Czochralski technique. The spectroscopic characterization of the crystals has been used to evaluate the laser cooling performance of the samples. Cooling by 3 degrees below ambient temperature is obtained in a single-pass geometry with 4.4 Watts of pump laser power at lambda = 1855 nm.

Based on the invention and widely application of the Czochralski pulling method, vanadate crystals have been grown and commercialized in recent decades. In this paper, the growth and characterization of a series of neodymium doped vanadate crystals have been reviewed, including Nd:YVO4, Nd:GdVO4, and Nd:LuVO4. The excellent thermal-mechanical and laser property make them to be used in many resp...