We report on the Czochralski method for single silicon crystal growth and discuss heat and mass transfer and defect formation in the crystal. A re ector was used for separation of the heating and cooling areas in the furnace enabling us to speed up crystal growth. The melt ow to stabilize the temperature distribution in a crucible was controlled using transverse magnetic elds in a large-scale s...

The growth of series of actual laser crystals belonging to di erent structural types by the Czochralski method is presented. The primary attention is given to single crystalline compounds and their solid solutions with garnet structure (scandium-containing rare-earth garnets with general formula {LnSc}3[ScMe]2Me3O12, Me = Al, Ga) as well as with olivine (forsterite Mg2SiO4) and scheelite struct...

Based on the invention and widely application of the Czochralski pulling method, vanadate crystals have been grown and commercialized in recent decades. In this paper, the growth and characterization of a series of neodymium doped vanadate crystals have been reviewed, including Nd:YVO4, Nd:GdVO4, and Nd:LuVO4. The excellent thermal-mechanical and laser property make them to be used in many resp...

Yttrium calcium oxoborate (YCOB) and Nd:YCOB crystals of high optical quality and large dimension have been grown by the Czochralski method. Measurements of refractive indices have confirmed that these crystals were negative biaxial. The absorption spectra were determined and the various spectrum parameters were calculated. Polarized absorption spectra revealed the strong anisotropic character ...

This work proposes a control configuration and a nonlinear multivariable model-based feedback controller for the reduction of thermal gradients inside the crystal in the Czochralski crystal growth process after the crystal radius has reached its final value. Initially, a mathematical model which describes the evolution of the temperature inside the crystal in the radial and axial directions and...

Various upgrades of the Czochralski (Cz) growth process are currently being investigated in order to increase throughput and reduce production cost high efficiency silicon-based solar cells. However, as-grown thermal donors (TD) Cz silicon can significantly conversion such An accurate simulation tool is therefore required investigate optimize TD formation during crystal growth. A numerical meth...

Attempts to grow terbium aluminium garnet (Tb3Al5O12, TAG) by the Czochralski method lead to crystals of millimeter scale. Larger crystals could not be obtained. DTA measurements within the binary system showed that TAG melts incongruently at 1840 ◦C. The perovskite (TbAlO3, TAP) with a congruent melting point of 1930 ◦C is the most stable phase in this system. The region for primary crystalliz...