نتایج جستجو برای: device temperature

تعداد نتایج: 1088388  

In this work, a novel Silicon on Insulator (SOI) MOSFET is proposed and investigated. The drain and source electrode structures are optimized to enhance ON-current while global device temperature and hot carrier injection are decreased. In addition, to create an effective heat passage from channel to outside of the device, a silicon region has embedded in the buried oxide. In order to reduce th...

پایان نامه :وزارت علوم، تحقیقات و فناوری - دانشگاه صنعتی اصفهان 1389

run-out-table (rot) is located between last finishing stand and down coiler in a hot strip mill. as the hot steel strip passes from rot, water jets impact on it from top and bottom and strip temperature decreases approximately from 800-950 °c to 500-750°c. the temperature history that strip experience while passing through rot affects significantly the metallurgical and mechanical properties, s...

2006
Hasina F. Huq Syed K. Islam Leon M. Tolbert

The objective of this paper is to investigate the feasibility and explore the potential of GaN-based devices for high temperature applications. An analytical temperature model based on modified charge control model is developed for the proposed device. The major tasks of this paper include the establishment of the compact model including the thermal effects and the validation of the analytical ...

2004
Byung-Gyu Kim Dong-Jo Park

To measure temperature, the device was placed on top of a heating element of a thermoelectric heat controller. The arrangement was enclosed in a plastic box to maintain a constant temperature across the length of the device. Again, both ends of the fibre were fixed with a tape to maintain a constant strain on the device. Temperature around the device was varied from 22 to 102°C and the correspo...

2012
Z. X. Chen K. D. Buddharaju H. M. Chua X. Li N. Singh

In this paper, we present a vertical wire NMOS device fabricated using CMOS compatible processes. The impact of temperature on various device parameters is investigated in view of usual increase in surrounding temperature with device density. Keywords—Gate-all-around, temperature dependence, silicon nanowire

2014
Hiteshwar Rao Dhruv Saxena Saurabh Kumar Sagar G. V. Bharadwaj S. Amrutur Prem Mony Prashanth Thankachan Kiruba Shankar Suman Rao Swarnarekha Bhat

In this paper we present the design of a wearable temperature sensing device for remote neonatal monitoring. It is designed for continuous and real-time monitoring of the infants in remote rural areas, for the first few weeks after their birth. It is capable of sensing the neonate’s skin temperature with 0.1◦ C accuracy to detect the early onset of hypothermia. The sensed data is transferred se...

Journal: :Journal of animal science 2010
R R Reuter J A Carroll L E Hulbert J W Dailey M L Galyean

A device was developed to monitor rectal temperature automatically in cattle for application in research settings. Compared with manual measurement of rectal temperature, this device decreases labor and time requirements and allows data collection without the influence of animal handling or restraint. The device consists of a custom-fabricated aluminum tail harness that supports an indwelling r...

2017
Martin Horcajo

An experimental method to measure the gate metal temperature of GaN-based HEMTs is demonstrated. The technique is based on transient thermoreflectance measurements performed from the backside of the device. The thermoreflectance coefficient of the gate metal was calibrated by correlating the relative change of its optical reflectivity with the temperature change measured in the GaN layer using ...

Journal: Journal of Nanoanalysis 2017

The Graphene based single electron transistor (SET) as a coulomb blockade device need to be explored .It is a unique device for high-speed operation in a nano scale regime. A single electron transfers via the coulomb barriers, but its movement may be prevented by coulomb blockade, so its effect is investigated in this research. The conditions of coulomb blockade and its controlling factors such...

Journal: :ACS sensors 2017
Hiroki Ota Minghan Chao Yuji Gao Eric Wu Li-Chia Tai Kevin Chen Yasutomo Matsuoka Kosuke Iwai Hossain M Fahad Wei Gao Hnin Yin Yin Nyein Liwei Lin Ali Javey

Real-time detection of basic physiological parameters such as blood pressure and heart rate is an important target in wearable smart devices for healthcare. Among these, the core body temperature is one of the most important basic medical indicators of fever, insomnia, fatigue, metabolic functionality, and depression. However, traditional wearable temperature sensors are based upon the measurem...

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