نتایج جستجو برای: dielectric layer

تعداد نتایج: 317300  

2012
M. Medina-Sánchez C. Martínez-Domingo E. Ramon S. Miserere A. Alcalde-Aragonés J. Carrabina A. Merkoçi

The developed bio-field effect transistor (BioFET) consists in nano-silver ink printed source and drain electrodes, a polymeric organic semiconductor, dielectric layer based on methyl methacrylate (MMA) and finally the reference electrode of silver-silver chloride ink. The thickness of the dielectric layer was optimized and characterized by Scanning Electron Microscopy (SEM) and by electrical m...

In this paper various layered planar periodic structures which provide miniaturization of planar antennas are proposed and discussed. The proposed designs are based on two concepts, reactive impedance surfaces and complementary periodic structures. In the proposed structures, complementary periodic rings and slots are patterned on the intermediate boundaries of the dielectric layers. A patch an...

2011
Carlos M. Bledt Daniel V. Kopp James A. Harrington Jason M. Kriesel

Hollow glass waveguides (HGWs) are an attractive alternative to traditional solid-core and 2D photonic crystal, infrared transmissive fibers. Applications for HGWs at wavelengths longer than 2 microns include use of the guides for the delivery of laser power and for use as chemical and thermal sensors. To date, the most common HGW is one with an inner coating of Ag followed by a single-dielectr...

2011
Priya Bhatia

Surface plasmon resonance based tapered fiber optic refractive index sensor incorporating an additional high index dielectric layer between metal and sensing medium using wavelength interrogation method is analyzed. The simulation is carried out for gold and silver metals. The simulation predicts, for a given taper ratio, the increase in the sensitivity of the sensor with increase in the thickn...

2009
Byoung Hun Lee Rino Choi

Dielectric breakdown characteristics of high-k dielectric have been intensively studied to develop a lifetime extrapolation model for device with metal/high-k gate stacks. Majority of prior works treated the high-k dielectric as a single layer dielectric like thermally grown SiO2 while the actual structure of high-k dielectric consists of two layers (high-k layer stacked on interfacial SiO2 lik...

Journal: :Optics express 2010
R Mehfuz M W Maqsood K J Chau

We describe a simple method for enhancing the efficiency of coupling from a free-space transverse-magnetic (TM) plane-wave mode into a surface-plasmon-polariton (SPP) mode. The coupling structure consists a metal film with a dielectric-filled slit and a planar, dielectric layer on the slit-exit side of the metal film. By varying the dielectric layer thickness, the wavevector of the SPP mode on ...

2007
H. T. Hui E. K. N. Yung

A rigorous analysis method is provided for a rectangular slot antenna loaded by a dielectric hemisphere with double dielectric coatings. The method is an integral equation approach and the moment method solution is sought. The antenna input impedance and radiation patterns are obtained and compared with the case with a single dielectric coating layer. The bandwidth of the antenna is found to be...

2015
Yiling Yu Yifei Yu Yongqing Cai Wei Li Alper Gurarslan Hartwin Peelaers David E. Aspnes Chris G. Van de Walle Nhan V. Nguyen Yong-Wei Zhang Linyou Cao

We systematically measure the dielectric function of atomically thin MoS2 films with different layer numbers and demonstrate that excitonic effects play a dominant role in the dielectric function when the films are less than 5-7 layers thick. The dielectric function shows an anomalous dependence on the layer number. It decreases with the layer number increasing when the films are less than 5-7 ...

2011
Jiro Yota

Thin silicon nitride (Si3N4) films deposited using plasma-enhanced chemical deposition (PECVD) method have been used as metalinsulator-metal (MIM) capacitor dielectric for GaAs heterojunction bipolar transistor (HBT) technology. The characteristics of the films, which were deposited at 300C, were found to be dependent on how the PECVD film was deposited. A silicon nitride film deposited as a mu...

2015
Bernd Striedinger Alexander Fian Andreas Petritz Roman Lassnig Adolf Winkler Barbara Stadlober

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface...

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