Direct measurements of the diffusion length of excitons in air-suspended single-walled carbon nanotubes are reported. Photoluminescence microscopy is used to identify individual nanotubes and to determine their lengths and chiral indices. Exciton diffusion length is obtained by comparing the dependence of photoluminescence intensity on the nanotube length to numerical solutions of diffusion equ...

I N T R O D U C T I O N The minority carrier diffusion length is one of main parameters characterizing the quality of semiconductor materials. Therefore development of methods for diffusion length measurements and reconstruction of its spatial distribution is very important for the characterization of as-grown semiconductor materials and structures, characterization of technology processes and ...

The spin diffusion length is a key parameter to describe the transport properties of spin polarized electrons in solids. Electrical spin injection in semiconductor structures, a major issue in spintronics, critically depends on this spin diffusion length. Gate control of the spin diffusion length could be of great importance for the operation of devices based on the electric field manipulation ...

Minority-carrier diffusion lengths in n-type 6H-SIC were measured using the planar electron-beam induced current (EBIC) technique. Experimental values of electron beam current, EBIC, and beam voltage were obtained for n-type SIC with a carrier concentration of 1.7E17 ~ m ~ . This data was fit to theoretically calculated diode efficiency curves, and the diffusion length and metal layer thickness...

The interpretation of measurements of the properties of weakly ionized plasmas in terms of diffusion of electrons and ions is reviewed both critically and tutorially. A particular effort is made to tie together various aspects of charged particle diffusion phenomena in quiescent, partially ionized plasmas. The concepts of diffusion length and effective diffusion coefficient and the treatment of...

Minority carrier diffusion length in p-type Sb-doped ZnO nanowires was measured as a function of temperature and forward bias injection duration. The minority carrier diffusion length displays a thermally activated length increase with the energy of 1446 5 meV. The forward bias injection exhibits an increase in diffusion length with the activation energy of 2176 20 meV, indicating the possible ...

An analytical solution of the equation describing diffusion of intrinsic point defects in semiconductor crystals has been obtained for a one-dimensional finite-length domain with the Robin-type boundary conditions. The distributions of point defects for different migration lengths of defects have been calculated. The exact analytical solution was used to verify the approximate numerical solutio...