This paper describes the design and measured performance of a 1-8GHz power amplifier MMIC fabricated with a 0.15um Gallium Nitride (GaN) process technology. The process features a 100um thick Silicon Carbide (SiC) substrate and compact transistor layouts with individual source grounding vias (ISV). The design utilizes a non-uniform distributed power amplifier (NDPA) topology with a novel trifil...

هديکچ ت یحارط یارب ديدج شور کي هلاقم نيا رد تيوق ارا یطخ زاف اب هدرتسگ هدننک ئ يم ه دوش . شور نيا تيوقت و لاسروسنارت لاتيجيد رتليف یژولوپوت نيب تهابش یانبم رب يم هدرتسگ هدننک دشاب . نيا یانبم رب رواجم هقبط ود نيب ريخات رادقم و هدننک تيوقت زا هقبط ره نيگ یژولوپوت رتليف هيروف طسب زا هدافتسا اب Raise Cosine يم نييعت یروط یسناکرف هلصاف رد هک دوش 0-40 GHz تيوقت یطخ زاف هصخشم یاراد هدننک دشاب ه...

Abstract The backward Raman amplifier (RA) can considered as one of the best solutions for optical communication, especially in Wavelength Division Multiplexing technology. They reduce nonlinear effects, have low noise figure and a wide frequency range. work this paper aims to attenuation signal due its propagation fiber increase both gain output power. Two models are proposed. Proposal model c...

In this paper, we analyze a distributed amplifier based on input/output attenuation compensation. The analysis is carried out for a HEMT transistor; and a constant-k section filter is used to calculate the amplifier’s characteristics such as attenuation factor, phase constant and gain. The proposed design approach enables us to examine the tradeoff among the variables, which include the type an...