نتایج جستجو برای: donor impurity

تعداد نتایج: 76749  

2005
P. Kaczor Z. Kaliński

In our work we study the doping behaviour of sulphur in Czochralski grown GaSb by means of the high resolution Fourier transform infrared spectroscopy and the secondary ion mass spectroscopy. We have revealed that the sulphur impurity forms an effective mass like donor state bound to the L-minimum of the conduction band. From the far infrared spectrum of this donor we derive the effective band ...

2009
A. J. Peter J. Ebenezar

The binding energies of shallow hydrogenic impurity in a GaAs/GaAlAs quantum dot with spherical confinement, harmonic oscillator-like and rectangular well-like potentials are calculated as a function of dot radius using a variational procedure within the effective mass approximation. The calculations of the binding energy of the donor impurity as a function of the system geometry have been inve...

2007
Shu-Shen Li Jian-Bai Xia

We propose a method for uniformly calculating the electronic states of a hydrogenic donor impurity in low-dimensional semiconductor nanostructures in the framework of effective-mass envelope-function theory, and we study the electronic structures of this systems. Compared to previous methods, our method has the following merits: (a) It can be widely applied in the calculation of the electronic ...

2000
C. Mailhiot Yia-Chung Chang

We present the results of a study of the energy spectrum of the ground state for shallow donors in quantum well structures, consisting of a single slab of GaAs sandwiched between two semiinfinite layers of Ga1 _ x Alx As. The effect of the position of the impurity atom within the central GaAs slab is investigated for different slab thicknesses and alloy compositions. Two limiting cases are pres...

2013
S. R. Chitra

The binding energy of a donor in spherical quantum dots (QDs) is calculated, using a variational approach within the effective mass approximation. The binding energy is computed for GaAs QD as a function of the dot size for different impurity positions, and also as a function of the impurity position for different dot sizes. The results of mine show that when the impurity binding energy increas...

E Abdolhosseini Sarsari, M Amirabbasi,

p { margin-bottom: 0.1in; direction: rtl; line-height: 120%; text-align: right; }a:link { color: rgb(0, 0, 255); } In this paper, the reported experimental data related to electrical transport properties in bulk ZnO, ZnMgO/ZnO and ZnMgO/ZnO/ZnMgO single and double heterostructures were analyzed quantitavely and the most important scattering parameters on controlling electron concentratio...

Journal: :Chemphyschem : a European journal of chemical physics and physical chemistry 2014
Jie Chen Xue-Feng Wang Panagiotis Vasilopoulos An-Bang Chen Jian-Chun Wu

A non-equilibrium Green's function technique combined with density functional theory is used to study the spin-dependent electronic band structure and transport properties of zigzag silicene nanoribbons (ZSiNRs) doped with aluminum (Al) or phosphorus (P) atoms. The presence of a single Al or P atom induces quasibound states in ZSiNRs that can be observed as new dips in the electron conductance....

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