نتایج جستجو برای: doping concentration

تعداد نتایج: 403896  

Journal: :Nanotechnology 2011
Fei Wang Jung-Hun Seo Dylan Bayerl Jian Shi Hongyi Mi Zhenqiang Ma Deyin Zhao Yichen Shuai Weidong Zhou Xudong Wang

An aqueous solution-based doping strategy was developed for controlled doping impurity atoms into a ZnO nanowire (NW) lattice. Through this approach, antimony-doped ZnO NWs were successfully synthesized in an aqueous solution containing zinc nitrate and hexamethylenetetramine with antimony acetate as the dopant source. By introducing glycolate ions into the solution, a soluble antimony precurso...

2018
Weidong Wang Liwen Bai Chenguang Yang Kangqi Fan Yong Xie Minglin Li

Based on the density functional theory (DFT), the electronic properties of O-doped pure and sulfur vacancy-defect monolayer WS₂ are investigated by using the first-principles method. For the O-doped pure monolayer WS₂, four sizes (2 × 2 × 1, 3 × 3 × 1, 4 × 4 × 1 and 5 × 5 × 1) of supercell are discussed to probe the effects of O doping concentration on the electronic structure. For the 2 × 2 × ...

2003
L. Ozyuzer J. F. Zasadzinski K. E. Gray D. G. Hinks N. Miyakawa

Tunneling measurements are performed on Carich single crystals of Bi2Sr2CaCu2O8+δ (Bi2212), with various oxygen doping levels, using a novel point contact method. At 4.2 K, SIN and SIS tunnel junctions are obtained with well-defined quasiparticle peaks, robust dip and hump features and in some cases Josephson currents. The doping dependence of tunneling conductances of Ca-rich Bi2212 are analyz...

2014
Keke Ma Ning Zhou Meng Yuan Dongsheng Li Deren Yang

Monodisperse indium tin oxide nanoparticles (ITO NPs) with high crystallinity have been synthesized by the rapid thermal injection method and the seed-mediated growth method. We demonstrate that the surface plasmon resonance (SPR) frequencies of ITO NPs can be manipulated from 1,600 to 1,993 nm in near-infrared band by controlling the composition, size, and morphology. The doping Sn concentrati...

2015
Mario Hofmann Ya-Ping Hsieh Kai-Wen Chang He-Guang Tsai Tzung-Te Chen

Graphene's low intrinsic carrier concentration necessitates extrinsic doping to enhance its conductivity and improve its performance for application as electrodes or transparent conductors. Despite this importance limited knowledge of the doping process at application-relevant conditions exists. Employing in-situ carrier transport and Raman characterization of different dopants, we here explore...

Journal: :Advanced materials 2012
Alexander Mityashin Yoann Olivier Tanguy Van Regemorter Cedric Rolin Stijn Verlaak Nicolas G Martinelli David Beljonne Jérôme Cornil Jan Genoe Paul Heremans

The mechanism by which molecular dopants donate free charge carriers to the host organic semiconductor is investigated and is found to be quite different from the one in inorganic semiconductors. In organics, a strong correlation between the doping concentration and its charge donation efficiency is demonstrated. Moreover, there is a threshold doping level below which doping simply has no elect...

2018
Qiang Zhang Tianyuan Xin Xiaoke Lu Yuexia Wang

We exploited novel two-dimensional (2D) carbon selenide (CSe) with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT) method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, ...

2010
J. Cho A. Mao J. K. Kim J. K. Son Y. Park E. F. Schubert

The characteristics of the reverse leakage current of GaInN/GaN multiple quantum well light-emitting diodes (LEDs) are examined with various n-type GaN doping concentrations and interpreted by using a tunnelling current model. Changing the doping concentration of the n-type GaN influences the tunnelling probability of electrons into the conduction band and thus the reverse leakage current. Redu...

Journal: :Nanoscale research letters 2016
Xiao-Li Fan Yu-Rong An Wen-Jun Guo

Manipulating electronic and magnetic properties of two-dimensional (2D) transitional-metal dichalcogenides (TMDs) MX2 by doping has raised a lot of attention recently. By performing the first-principles calculations, we have investigated the structural, electronic, and magnetic properties of transitional metal (TM)-doped MoS2 at low and high impurity concentrations. Our calculation result indic...

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