نتایج جستجو برای: double gate field effect
تعداد نتایج: 2544624 فیلتر نتایج به سال:
We study the bias-temperature instability (BTI) on the back gate of double-gated graphene field-effect transistors (GFETs). The dependence of the resulting degradation on the stress time and oxide field is analyzed. Finally, the results are compared to the ones obtained on the high-k top gate of the same device.
This paper discusses the type of capacitances for Single Gate MOSFET and Double Gate MOSFET including their quantity. The effect of parasitic capacitance makes double gate MOSFET more suitable component for the designing of digital logic switches than single gate MOSFET. Here, we introducing Independent double gate MOSFET operation based on VeSFET concept. Then introducing with the total capaci...
Vertically grown carbon nanotubes have the potential for tera-level integration. However, the well-known ambipolar behavior limits the performance of carbon nanotube field effect transistors. In this work we demonstrate that a double gate structure effectively suppresses the ambipolar behavior. Using the double gate design excellent device characteristics along with the potential for high scale...
This work investigates the channel thickness dependency of high-k gate dielectric-based complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a conventional double-gate metal gate oxide semiconductor field-effect transistor (DG-MOSFET). It is espied that the use of high-k dielectric as a gate oxide in n/p DG-MOSFET based CMOS inverter results in a high noise margin as well...
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