نتایج جستجو برای: edge dislocation

تعداد نتایج: 140216  

Journal: :Physical review letters 2007
Henny W Zandbergen Chun-Wei Pao David J Srolovitz

High-resolution electron microscopy investigations of Au films show that adatoms on (100) surfaces insert into the underlying terrace to form surface dislocations. This injection readily occurs when the number of adatoms on a terrace is approximately 20 atoms or less. The surface dislocation glides along the terrace, but is repelled from the edges. The dislocation escapes by squeezing out in th...

2013
Quanlong Liu Chunwang Zhao Shaojian Su Jijun Li Yongming Xing Buwen Cheng

Ge/Si heterostructure with fully strain-relaxed Ge film was grown on a Si (001) substrate by using a two-step process by ultra-high vacuum chemical vapor deposition. The dislocations in the Ge/Si heterostructure were experimentally investigated by high-resolution transmission electron microscopy (HRTEM). The dislocations at the Ge/Si interface were identified to be 90° full-edge dislocations, w...

2003
V. A. Lubarda

The correspondence theorem which relates the solutions of displacement boundary value problems in classical and couple stress elasticity is formulated and applied to derive the solutions for edge and screw dislocations in an infinite medium. The effects of couple stresses on the dislocation strain energy is evaluated for both types of dislocations. It is shown that within a radius of influence ...

Journal: :Nano letters 2013
A Lubk M D Rossell J Seidel Y H Chu R Ramesh M J Hÿtch E Snoeck

The performance of ferroelectric devices, for example, the ferroelectric field effect transistor, is reduced by the presence of crystal defects such as edge dislocations. For example, it is well-known that edge dislocations play a crucial role in the formation of ferroelectric dead-layers at interfaces and hence finite size effects in ferroelectric thin films. The detailed lattice structure inc...

2016
Yeesuk Kim Joon-Kuk Kim Il-Han Joo Kyu-Tae Hwang Young-Ho Kim

PURPOSE We investigated the incidence and time of dislocation and other factors associated with dislocation of bipolar hemiarthroplasty related to the treatment of femoral neck fracture in old age patients. MATERIALS AND METHODS Between January 2002 and April 2014, 498 femoral neck fractures (467 patients) were treated with bipolar hemiarthroplasty and included in this study. All surgeries we...

2014
Mrinal Iyer Balachandran Radhakrishnan Vikram Gavini

We employed a real-space formulation of orbital-free density functional theory using finiteelement basis to study the defect-core and energetics of an edge dislocation in Aluminum. Our study shows that the core-size of a perfect edge dislocation is around ten times the magnitude of the Burgers vector. This finding is contrary to the widely accepted notion that continuum descriptions of dislocat...

The present paper deals with the mixed mode fracture analysis of a weakened orthotropic half-plane with multiple cracks propagation. The orthotropic half-plane contains Volterra type glide and climb edge dislocations. It is assumed that the medium is under in-plane loading conditions. The distributed dislocation technique is used to obtain integral equations for the dynamic problem of multiple ...

1999
R. Jones

A review is given of the results of first principles calculations used to investigate the structures and electronic properties of screw and edge dislocations in GaN. The atoms at the core of the full core screw dislocation possess heavily strained bonds leading to deep gap states. Removing the first shell of Ga and N atoms gives a screw dislocation with a small open core consisting of f10 10g t...

2008
J. W. Lee M. Skowronski

The structure of the “star” defect in 4H-SiC substrates and its effects on the extended defect structures in the epilayers were studied by molten KOH etching and transmission x-ray topography. Star defects consist of a center region with high densities of threading dislocations (both edge and screw types) and six arms of dislocation arrays extending along <11-20> directions. In addition, multip...

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