By scaling down the feature size of CMOS technology deeply in nanoranges, many problems and challenges, such as short channel effects, will restrict its usefulness for the near future robust and energy efficient applications. The CNFET nanodevice seems to be a feasible alternative for bulk CMOS due to its unique electrical properties and similarities with MOSFET. In this paper, efficient CNFET-...

Recent years have witnessed a burst of experimental activity concerning algorithmic self-assembly of nanostructures, motivated at least in part by the potential of this approach as a radically new manufacturing technology. Our specific interest is in the self-assembly of Carbon-Nanotube Field Effect Transistor (CNFET) circuits. Our research is focused on developing a new theoretical foundation ...

In this paper, a reconfigurable, low power four quadrant memristor and carbon nanotube field effect Transistor (CNFET) based analog multiplier is proposed. The circuit is verified by extensive HSPICE simulations using experimentally verified memristor and Stanford CNFET models that have been calibrated for 90% accuracy at the 32nm technology node. The proposed multiplier has an input range of ±...

In this paper, a full adder cell based on majority function using Carbon-Nanotube Field-Effect Transistor (CNFET) technology is presented. CNFETs possess considerable features that lead to their wide usage in digital circuits design. For the design of the cell input capacitors and inverters are used. These kinds of design method cause a high degree of regularity and simplicity. The proposed des...

There is a need to explore circuit designs in new emerging technologies for their rapid commercialization to extend Moore’s law beyond 22 nm technology node. Carbon nanotube based transistor (CNFET) has significant potential to replace CMOS in the future due to its better electrostatics and higher mobility. This paper presents a complete optimal design of an inverting amplifier in CMOS, CNFET a...

The carbon nanotube field-effect transistor (CNFET) has attracted a great deal of interest due to predictions of its superior performance over that of ultimately-scaled silicon MOSFETs [1, 2]. While significant progress has been made in predicting its behaviour, simulations have primarily focused on azimuthally invariant structures, such as the cylindrically-gated CNFET [2, 3]. While this may b...

High speed Full-Adder (FA) module is a critical element in designing high performance arithmetic circuits. In this paper, we propose a new high speed multiple-valued logic FA module. The proposed FA is constructed by 14 transistors and 3 capacitors, using carbon nano-tube field effect transistor (CNFET) technology. Furthermore, our proposed technique has been examined in different voltages (i.e...

Carbon nanotubes are nanocomponents par excellence that offer unique properties to be exploited in next-generation devices. Sensing applications are perhaps the class that has most to gain from single-walled carbon nanotubes (SWNTs); virtually any property of SWNTs (e.g., electronic, electrical, mechanical, and optical) can result or has already resulted in sensor concept demonstrators. The bas...

scaling challenges and limitations of conventional silicon transistors have led the designers to apply novel nano-technologies. one of the most promising and possible nano-technologies is cnt (carbon nanotube) based transistors. cnfet have emerged as the more practicable and promising alternative device compared to the other nanotechnologies.  this technology has higher efficiency compared to t...

In this article, we propose a carbon nanotube (CNT) field-effect transistor (CNFET)-based static random access memory (SRAM) design at the 5-nm technology node that is optimized based on tradeoff between performance, stability, and power efficiency. addition to size optimization, physical model parameters including CNT density, diameter, CNFET flat band voltage are evaluated for SRAM performanc...