The development of light-emitting diodes with improved efficiency, spectral properties, compactness and integrability is important for lighting, display, optical interconnect, logic and sensor applications. Monolayer transition-metal dichalcogenides have recently emerged as interesting candidates for optoelectronic applications due to their unique optical properties. Electroluminescence has alr...

We report a novel unipolar light-emitting device architecture that operates using direct-current, field-driven electroluminescence of colloidally synthesized quantum dots (QDs). This device architecture, which is based only on transparent ceramics and QDs, enables emission from different color QDs and, for the first time, constant QD electroluminescence during extended operation in air, unpacka...

An improved Fourier transform infrared spectroscopy approach adapting to photoluminescence and electroluminescence measurements in mid-infrared has been developed, in which diode-pumped solid-state excitation lasers were adopted for photoluminescence excitation. In this approach, three different Fourier transform infrared modes of rapid scan, double modulation, and step scan were software switc...

The electroluminescence of p-i-n diodes with fully strained Si0.80Ge0.20 /Si(001) is dominated by radiative recombination in an electron–hole plasma. The recombination mechanisms and the band gap renormalization have been studied experimentally and by modeling. In order to minimize the influence of the SiGe/Si interface regions and thus to study the intrinsic behavior of strained SiGe, electrol...

Intersubband electroluminescence has been investigated in a quantum cascade structure based on vertical transition designed for far-infrared (l588 mm) emission. A narrow luminescence peak with a full width at half maximum of 0.7 meV is measured at low excitation currents ~30 A/cm! and low temperature (T55 K). The electroluminescence efficiency exhibits a strong temperature and current dependenc...

Developing a nanoscale, integrable, and electrically pumped single mode light source is an essential step toward on-chip optical information technologies and sensors. Here, we demonstrate nanocavity enhanced electroluminescence in van der Waals heterostructures (vdWhs) at room temperature. The vertically assembled light-emitting device uses graphene/boron nitride as top and bottom tunneling con...

sReceived 11 February 2005; accepted 27 April 2005; published online 20 June 2005d Bright green electroluminescence with luminance up to 2800 cd/m2 is reported from indium-tin-oxide/SiO2:Tb/Si metal-oxide-semiconductor devices. The SiO2:Tb 3+ gate oxide was prepared by thermal oxidation followed by Tb+ implantation. Electroluminescence and photoluminescence properties were studied with variatio...

The ability to confine and manipulate light below the diffraction limit is a major goal of future multifunctional optoelectronic/plasmonic systems. Here, we demonstrate the design and realization of a tunable and localized electrical source of excitons coupled to surface plasmons based on a polymer light-emitting field-effect transistor (LEFET). Gold nanorods that are integrated into the channe...

The positioning of single molecules between nanoscale electrodes has allowed their use as functional units in electronic devices. Although the electrical transport in such devices has been widely explored, optical measurements have been restricted to the observation of electroluminescence from nanocrystals and nanoclusters and from molecules in a scanning tunnelling microscope setup. In this Le...