Electron accelerators operating above about 10 MeV produce significant quantities of photoneutrons. This is not a new problem and was first reported by Laughlin1 in 1951 for a 23 MeV betatron. In recent years it has drawn considerable attention because of the increased use of higher-energy electron linear accelerators for radiation therapy and also because of the increased awareness of radiatio...

Gate dielectric leakage current becomes a serious concern as sub-20Å gate oxide prevails in advanced CMOS processes. Oxide this thin can conduct significant leakage current by various direct-tunneling mechanisms and degrade circuit performance. While the gate leakage current of MOS capacitors has been much studied, little has been reported on compact MOSFET modeling with gate leakage. In this w...

some issues; leakage, tunneling currents, boron diffusion are threatening sio2 to be used as a good gate dielectric for the future of the cmos (complementary metal- oxide- semiconductor) transistors. for finding an alternative and novel gate dielectric, the nio (nickel oxide) and pva (polyvinyl alcohol) nano powders were synthesized with the sol-gel method and their nano structural properties w...

Di-block copolymer synthesized Co/Al2O3 core-shell nanocrystal (NC) capacitors were fabricated in order to study the temperature-dependent electron transport. The capacitance-voltage memory window is shown to increase proportionally with the substrate temperature, saturating at 3.5 V, at 175 C. At elevated operating temperatures, the tunneling of electrons increases, resulting in large flatband...

We used the Cu ions for the leakage analysis between pulp capping and restorative materials. Theoretically, Cu has more advantages than Ag ions due to their smaller radii (rCu (2+)=73 pm and rAg (2+)=94 pm), lower mass density (dCu=8.96 g/cm(3) and dAg=10.49 g/cm(3)) and higher radio opacity which can be more useful by X-ray or EDX detectors, cheaper price and more abundance in planet when comp...

Large leakage-current reduction of SiO2 due to the phonon-energy-coupling enhancement effect was confirmed by measuring the oxide thickness using a cross-sectional transmission electron microscopy. There is a critical temperature Tc. Rapid thermal processing RTP of SiO2 at T Tc in pure N2 leads to a destructive structure with large leakage current, while RTP at T Tc in pure N2 does not change t...