نتایج جستجو برای: etching

تعداد نتایج: 11276  

2013
Abdolrahim Davari Mostafa Sadeghi Hamid Bakhshi

Background and aims. Er:YAG laser irradiation has been claimed to improve the adhesive properties of dentin; therefore, it has been proposed as an alternative to acid etching. The aim of this in vitro study was to investigate the shear bond strength of an etch-and-rinse adhesive system to dentin surfaces following Er:YAG laser and/or phosphoric acid etching. Materials and methods. The roots of ...

F. Alfeel, F. Awad F. Qamar I. Alghoraibi

Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...

This paper shows that the reflectance in silicon nanowires (SiNWs) can be optimized as a function of the area of silicon substrate where the nanostructure growth. SiNWs were fabricated over four different areas of silicon substrates to study the size effects using electroless etching technique. Three different etching solution concentrations of silver nitrate (AgNO3) and hydroflu...

2012
Hyungjoo Shin Weiye Zhu Vincent M. Donnelly Demetre J. Economou

The authors report a new, important phenomenon: photo-assisted etching of p-type Si in chlorinecontaining plasmas. This mechanism was discovered in mostly Ar plasmas with a few percent added Cl2, but was found to be even more important in pure Cl2 plasmas. Nearly monoenergetic ion energy distributions (IEDs) were obtained by applying a synchronous dc bias on a “boundary electrode” during the af...

2012
Adriano Fonseca Lima Vinícius Brito da Silva Giulliana Panfiglio Soares Giselle Maria Marchi Flávio Henrique Baggio Aguiar José Roberto Lovadino

OBJECTIVES The aim of this study was to evaluate the (1) bond strength of a etch-and-rinse and self-etching adhesive systems to cavosurface enamel, (2) influence of the previous acid etching with phosphoric acid 35% to the self-etching adhesive application on bond strength values, and (3) analysis of the cavosurface enamel morphology submitted to different types of conditioning, with the use of...

Journal: :international journal of nanoscience and nanotechnology 2011
j. kaur s. singh r. kumar d. kanjilal sh. chakarvarti

in this paper, we have studied the electrical properties of the randomly distributed metallic (co and fe) nano/ micro wires on silicon substrate. deposition was carried out potentiostatically into the pores of the track-etch polycarbonate membrane spin coated onto the si substrate. spin coated films were irradiated with 150mev ni (+11) ions at a fluence of 8e7 ions/cm2, followed by uv irradiati...

Journal: :European journal of paediatric dentistry : official journal of European Academy of Paediatric Dentistry 2004
J R Boj A M Martín E Espasa O Cortés

AIMS These were to firstly evaluate the shear bond strength of a composite resin to primary dental enamel treated with a standard adhesive system but with varying phosphoric acid etching times along with a self-etching prime, secondly to analyse the etching patterns using SEM. METHODS Forty primary molars were used. In the first three groups, following acid etching, a layer of Prime & Bond NT...

F. Alfeel, F. Awad F. Qamar I. Alghoraibi

Porous silicon samples were prepared by electrochemical etching method for different etching times. The structural properties of porous silicon (PS) samples were determined from the Atomic Force Microscopy (AFM) measurements. The surface mean root square roughness (σ rms) changes as function of porosity were studied, and the influence of etching time on porosity and roughness was studied too. U...

2002
Y. Tosaka S. Nakajima

Damage free etching is required for the gate etching process in GaAs IC fabrication. While inductively coupled plasma (ICP) is thought to be the low damage etching technique, the degradation of DC characteristics was observed in our GaAs MESFETs. Threshold voltage shifts and Schottky barrier height is decreased. It was confirmed that the control of the antenna power (i.e. applied power to the u...

2013
Sun-Jin Yoo Young-Kyung Kim Jeong-Won Park Myoung-Uk Jin Sung Kyo Kim

Recently, self-etching adhesive system has been introduced to simplify the clinical bonding procedures. It is less acidic compared to the phosphoric acid, thus there is doubt whether this system has enough bond strength to enamel. The purpose of this study was to investigate the influence of additional etching on the adhesion of resin composite to enamel. Ninety extracted bovine permanent anter...

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