A highly sensitive hydrazine chemical sensor has been fabricated based on a field-effect transistor (FET) by growing vertically-aligned ZnO nanorods directly on silver electrodes. The FET sensor showed a high sensitivity and a low limit of detection (LOD) of 59.175 μA cm(-2)μM(-1) and ~3.86 nM, respectively. This demonstrates a cost effective and low power consuming FET strategy for the detecti...

In order to manufacture short gap single Si nanowire (NW) field effect transistor (FET) by imprinting and transferring method, we introduce the method using Al2O3 sacrificial layer. The diameters of cylindrical Si NW addressed between Au electrodes by dielectrophoretic (DEP) alignment method are controlled to 106, 128, and 148 nm. After imprinting and transfer process, cylindrical Si NW is embe...

Coronene·TCNQ cocrystal microrods, coronene microrods, and TCNQ microsheets were constructed by a drop-casting method. Prototype devices were fabricated and their field-effect-transistor (FET) performances were investigated. It is found that coronene·TCNQ microrods had exhibited an n-type characteristic and showed better FET performances than TCNQ microsheets.

The Suspended Gate Field Effect Transistor (SG-FET) appears to have the potential to replace traditional FETs in sleep mode circuits, due to its abrupt switching enabled by electromechanical instability at a certain threshold voltage and its ultra low “off” current (Ioff). This paper presents a preliminary assessment of the SG-FET potential if utilized as sleep transistor in real applications, ...

This paper presents a simple behavioral model with experimentally extracted parameters for packaged cascode gallium nitride (GaN) field-effect transistors (FETs). This study combined a level-1 metal–oxide–semiconductor field-effect transistor (MOSFET), a junction field-effect transistor (JFET), and a diode model to simulate a cascode GaN FET, in which a JFET was used to simulate a metal-insulat...

The crystal structures, thin-film properties, and field-effect transistor (FET) characteristics of tetrathiafulvalene (TTF) derivatives with two phenyl groups are systematically investigated. The highest mobility, 0.11 cm(2) V(-1) s(-1), is observed in biphenyl-substituted TTF (1). The correlation between the crystal structures and the FET properties demonstrates that good transistor properties...

We have simulated the behavior of a rod shaped nanoscale ring-gated field-effect transistor (O-FET) using the PISCES-IIb[1] semiconductor drift-diffusion solver. The results from these simulations are used by a custom SPICE 3f5[2] kernel to simulate several simple logic gates. The usefulness of this kind of transistor is examined within the context of a self-assembling fabrication technique tha...

We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometerscale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET with a carrier signal at its resonance frequency, small signals at the transistor’s gate modulate t...

Microelectronic-based biosensors that allow noninvasive measurement of cell activity are in the focus of current developments, however, the mechanisms underlying the cell-transistor coupling are not completely understood. In particular, characteristic properties of the extracellular voltage response such as the waveform and amplitude are not satisfactorily described by electrical circuit models...

In this study, a laterally coupled device composed of a photodiode and a Si nanowires-field-effect transistor (NWs-FET) is constructed on a plastic substrate and the coupled device is characterized. The photodiode is made of p-type Si NWs and an n-type ZnO film. The Si NWs-FET is connected electrically to the photodiode in order to enhance the latter's photocurrent efficiency by adjusting the g...