We calculate the electronic states of the Mn-doped semiconductors and show that resonant states are formed at the top of the down spin valence band due to magnetic impurities and that they give rise to a strong and long-ranged ferromagnetic coupling between Mn moments. We propose that the coupling of the resonant states, in addition to the intra-atomic exchange interaction between the resonant ...

The experimental philosopher Robert Hooke (1635-1703) is known to have apprenticed to the leading painter Peter Lely on his first arrival in London in the late 1640s. Yet the relevance of Hooke's artistic training to his mature draughtsmanship and identity has remained unclear. Shedding light on that larger interpretive problem, this article argues for the attribution to Hooke of a figural draw...

We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity measurements dur...

Using synchrotron based photoemission, we have investigated the Mn-induced changes in Ga 3d core level spectra from as-grown Ga(1-x)Mn(x)As. Although Mn is located in Ga substitutional sites, and therefore does not have any Ga nearest neighbors, the impact of Mn on the Ga core level spectra is pronounced even at Mn concentrations in the region of 0.5%. The analysis shows that each Mn atom affec...

We introduce a new class of spintronic devices in which a spin-valve-like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled ferromagnets. The effect is observed in a normal-metal-insulator-ferromagnetic-semiconductor tunneling device. This behavior is caused by the interplay of the a...

We consider current-induced domain wall motion and, the reciprocal process, moving domain wall-induced current. The associated Onsager coefficients are expressed in terms of scattering matrices. Uncommonly, in (Ga,Mn)As, the effective Gilbert damping coefficient alphaw and the effective out-of-plane spin-transfer torque parameter betaw are dominated by spin-orbit interaction in combination with...

: We have investigated the initial stage of hydrolysis process of Ga-terminated GaN surfaces by using first-principles theoretical calculations. We found that the activation barrier of H2O dissociation at the kinked site of the Ga-terminated GaN surface is about 0.8 eV, which is significantly lower than that at the stepped site of about 1.2 eV. This is consistent with the experimental observati...

Two different ferromagnetic-paramagnetic transitions are detected in (Ga,Mn)As/GaAs(001) epilayers from ac susceptibility measurements: transition at a higher temperature results from (Ga,Mn)As cluster phases with [110] uniaxial anisotropy and that at a lower temperature is associated with a ferromagnetic (Ga,Mn)As matrix with 100 cubic anisotropy. A change in the magnetic easy axis from [100] ...